Free carrier lifetime reduction in silicon by electron-beam irradiation

Codreanu, C.; Vasile, Eugeniu; Iliescu, E.; Avram, Monica; Badoiu, A.; Ravariu, Cristian

doi:10.1109/smicnd.2000.890230

Cited by 6 publications

(3 citation statements)

References 5 publications

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“…The decease of leakage current and increase of breakdown voltage may be attributed to the uniformity of the La 2 O 3 /Al 2 O 3 nanolaminates as well as the reduction of impurities or residuals at the interface. The leakage current may originate either Poole-Frenckel or Fowler-Nordheim mechanism from the point of view of quantum tunneling [ 29 , 30 ], which has been confirmed in our measurement. The lowest leakage current and highest breakdown voltage are obtained for O 3 -based La 2 O 3 /Al 2 O 3 nanolaminates on MoS 2 with UV-O 3 treatment, making it a promising dielectric candidate for the application of MoS 2 FETs.…”

Section: Resultssupporting

confidence: 79%

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

et al. 2022

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Due to the chemically inert surface of MoS2, uniform deposition of ultrathin high-κ dielectric using atomic layer deposition (ALD) is difficult. However, this is crucial for the fabrication of field-effect transistors (FETs). In this work, the atomic layer deposition growth of sub-5 nm La2O3/Al2O3 nanolaminates on MoS2 using different oxidants (H2O and O3) was investigated. To improve the deposition, the effects of ultraviolet ozone treatment on MoS2 surface are also evaluated. It is found that the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates change greatly for different oxidants and treatment processes. These changes are found to be associated with the residual of metal carbide caused by the insufficient interface reactions. Ultraviolet ozone pretreatment can substantially improve the initial growth of sub-5 nm H2O-based or O3-based La2O3/Al2O3 nanolaminates, resulting in a reduction of residual metal carbide. All results indicate that O3-based La2O3/Al2O3 nanolaminates on MoS2 with ultraviolet ozone treatment yielded good electrical performance with low leakage current and no leakage dot, revealing a straightforward approach for realizing sub-5 nm uniform La2O3/Al2O3 nanolaminates on MoS2.

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Section: Resultssupporting

confidence: 79%

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

et al. 2022

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“…N B of irradiation diodes were be a little bit decreased from no treatment, this support the concept that defects or traps in bulk decreased resistivity of bulk [3][4][5] and agreed with dropping of current conduction in high-level injection. …”

Section: A I-v Characteristicssupporting

confidence: 70%

Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation

Itthikusumarn

Prabket

Poyai

2013

2013 13th International Symposium on Communications and Information Technologies (ISCIT)

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Power diodes development concentrate on fast switching, high reverse voltage blocking and low power consumption. One way to improve switching property is reducing minority carrier lifetime by electron irradiation. This paper presented degradation of silicon PN junction which cause from lifetime modification by electron irradiation. Silicon PIN power diodes were irradiated electron ray at different dose, 50, 100 and 150 KGy respectively, to compare with no treatment diodes. The result show that electron irradiation can reduce lifetime extremely but saturation current which effect to reverse leakage current will increase more than two orders when diodes were irradiated. J A -W D method shows that increasing in generation current via center traps of defects from irradiation is major reason of degradation in reverse leakage current and other electrical characteristics.

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“…The levels E2 and E3 each have a low concentration and capture coefficient and are annealed at relatively low temperatures, which have a negligible influence on the recombination activity. [8] According to Ref. [3], acceptor level (E C -0.23 eV) of platinum is an effective recombination level at high injection, while it acts as a weak recombination center at low injection.…”

Section: Recombination Centersmentioning

confidence: 99%

Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode

Jia¹,

Zhao²,

Yang³

et al. 2015

Chinese Phys. B

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Free carrier lifetime reduction in silicon by electron-beam irradiation

Cited by 6 publications

References 5 publications

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment

Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation

Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode

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