2016
DOI: 10.1007/s00340-015-6308-5
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Free charge carrier absorption in silicon at 800 nm

Abstract: The transmission of a Ti:sapphire laser beam (c.w. and fs pulsed operation at 800 nm) through a 10 µm thin oxidized silicon membrane at 45 • angle of incidence at first increases with the incident laser power, then shows a maximum, and finally decreases considerably. This nonlinear transmission behavior is the same for c. w. and pulsed laser operation and mainly attributed to free charge carrier (FCA) absorption in Si. A simple FCA model is developed and tested.

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Cited by 6 publications
(1 citation statement)
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“…In addition, we ignore non-linear light absorptions such as two-photon and free-carrier absorptions in this model since these effects are weak and do not affect the calculation results under the present fluence of 1 mJ/cm 2 . 27 By solving Eqs. (1)–(4) using the finite-element method, we investigated carrier-strain dynamics in silicon plates.…”
Section: Methodsmentioning
confidence: 99%
“…In addition, we ignore non-linear light absorptions such as two-photon and free-carrier absorptions in this model since these effects are weak and do not affect the calculation results under the present fluence of 1 mJ/cm 2 . 27 By solving Eqs. (1)–(4) using the finite-element method, we investigated carrier-strain dynamics in silicon plates.…”
Section: Methodsmentioning
confidence: 99%