Articles you may be interested inMolecular self ordering and charge transport in layer by layer deposited poly (3,3-dialkylquarterthiophene) films formed by Langmuir-Schaefer technique J. Appl. Phys. 116, 094311 (2014); 10.1063/1.4894515 Molecular and electronic structure of electroactive self-assembled monolayers Structure and optical properties of self-assembled multicomponent plasmonic nanogels Appl. Phys. Lett. 99, 043112 (2011); 10.1063/1.3615785 Energy level alignment at organic semiconductor/metal interfaces: Effect of polar self-assembled monolayers at the interface J. Chem. Phys. 128, 074705 (2008); 10.1063/1.2832306Conformations and charge transport characteristics of biphenyldithiol self-assembled-monolayer molecular electronic devices: A multiscale computational studyWe fabricated a variety of two-terminal devices using self-assembled monolayers ͑SAM͒ of solid-state mixtures comprised of molecular "wires" ͓1,4-methane-benzenedithiol ͑Me-BDT͔͒ and molecular insulator "spacers" ͓1-pentanethiol͔, which were prepared at various molar concentrations ratio, r of wires/spacers, and sandwiched between two gold electrodes. The devices' electrical transport was investigated at several r values using the bias voltage ͑V͒ dependencies of the conductance and differential conductance at various temperatures. In parallel, we also studied the UV-visible absorption and photoluminescence ͑PL͒ emission spectra of the SAM mixtures grown on silica transparent substrates. For r Ͼ 10 −3 we found that two-dimensional ͑2D͒ Me-BDT aggregates are formed in the SAM films leading to novel properties compared to SAM films of isolated Me-BDT molecules at concentrations 10 −8 Ͻr Ͻ 10 −4 , which we studied before ͓V. Burtman, A. S. Ndobe, and Z. V. Vardeny, J. Appl. Phys. 98, 034314 ͑2005͔͒. First, an Ohmic response in the current-voltage ͑I-V͒ characteristics is obtained up to V ϳ 0.5 V, which results in a new band in the differential conductance spectrum around V = 0. Second, a new subgap absorption band is formed at ϳ2.4 eV, which is related to a new yellow/red PL emission band. The novel optical and electrical properties of the 2D Me-BDT aggregates are explained by the formation of an electronic continuum band in the Me-BDT energy gap, which is caused by weak in-plane charge delocalization among the molecules forming the aggregates. To verify this model we also studied SAM molecular aggregate diodes using Al electrodes. The 1-eV difference in the electrode work function between Au and Al metals results in a pronounced E F shift with respect to the aggregate-related continuum band in the gap, and consequently, dramatically changes the device I-V characteristics.