Free-exciton energy spectrum in GaAs

Nam, Sang Boo; Reynolds, D. C.; Litton, C. W.; Almassy, Robert J.; Collins, T. C.; Wolfe, C. M.

doi:10.1103/physrevb.13.761

Cited by 112 publications

(51 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1a. One can clearly distinguish the detailed spectrum of the n + /i-GaAs homojunction at a temperature of 3.6 K. The sharp line, entitled X i , corresponds to the emission from i-GaAs layer, whereas the associated energy of 1.515 eV corresponds to the free exciton transition in a GaAs crystal of intrinsic conductivity [7]. The arrow (154)…”

Section: Resultsmentioning

confidence: 99%

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

et al. 2011

View full text Add to dashboard Cite

This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, NSi = 10 17 cmand NSi = 10 18 cm −3 , was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the n + /i-GaAs homojunction are discussed.

show abstract

Section: Resultsmentioning

confidence: 99%

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

et al. 2011

View full text Add to dashboard Cite

show abstract

“…One can distinguish the detailed spectrum of n + /i-GaAs homojunction at 3.6 K temperature. The sharp line, entitled X i , corresponds to the emission from i-GaAs layer and has the energy of 1.515 eV, which corresponds to free exciton transition in GaAs crystal of intrinsic conductivity [4]. (e-A) i indicates free electron-neutral acceptor transitions, and (D-A) i denotes donor-acceptor transitions in i-GaAs layer.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of excitonic photoluminescence in silicon-dopedn⁺/i-GaAs structures

Kazlauskaitė¹,

Sužiedėlis²,

Čerškus³

et al. 2009

Lithuanian J. Phys.

View full text Add to dashboard Cite

We present photoluminescence spectra of a molecular beam epitaxy grown GaAs structure consisting of the layer of intrinsic conductivity having 500 nm thickness and capped with silicon-doped 100 nm thick layer. The spectra were measured in the range of 3.6-77 K crystal lattice temperatures and at various laser excitation energies. Possible mechanisms of experimentally observed excitonic line narrowing and intensity enhancement in n + /i-GaAs homojunction are discussed.

show abstract

“…Hereby, TMD- heterostructures represent an intriguing possibility to excitonic phenomena compared to conventional heterostructures e.g. in GaAs with a much smaller exciton binding energy of only a few meV [168] .…”

Section: Optical Properties Of Tmdc Heterostructuresmentioning

confidence: 99%

Light–matter interaction in transition metal dichalcogenides and their heterostructures

Wurstbauer¹,

Miller²,

Parzinger³

et al. 2017

J. Phys. D: Appl. Phys.

110

View full text Add to dashboard Cite

Abstract:The investigation of two-dimensional van der Waals materials is a vibrant, fast moving and still growing interdisciplinary area of research. Two-dimensional van der Waals materials are truly two-dimensional crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers with a variety of different electronic, optical and mechanical properties. A very prominent class of twodimensional materials are transition metal dichalcogenides and amongst them particularly the semiconducting subclass. Their properties include bandgaps in the near-infrared to the visible range, decent charge carrier mobility together with high (photo-)catalytic and mechanical stability and exotic many body phenomena. These characteristics make the materials highly attractive for both fundamental research as well as innovative device applications. Furthermore, the materials exhibit a strong light matter interaction providing a high sun light absorbance of up to 15% in the monolayer limit, strong scattering cross section in Raman experiments and access to excitonic phenomena in van der Waals heterostructures. This review focuses on the light matter interaction in MoS2, WS2, MoSe2, and WSe2 that is dictated by the materials complex dielectric functions and on the multiplicity of studying the first order phonon modes by Raman spectroscopy to gain access to several material properties such as doping, strain, defects and temperature. Two-dimensional materials provide an interesting platform to stack them into van der Waals heterostructures without the limitation of lattice mismatch resulting in novel devices for application but also to study exotic many body interaction phenomena such as interlayer excitons. Future perspectives of semiconducting transition metal dichalcogenides and their heterostructures for applications in optoelectronic devices will be examined and routes to study emergent fundamental problems and manybody quantum phenomena under excitations with photons will be discussed.

show abstract

Free-exciton energy spectrum in GaAs

Cited by 112 publications

References 21 publications

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

Enhancement of excitonic photoluminescence in silicon-dopedn⁺/i-GaAs structures

Light–matter interaction in transition metal dichalcogenides and their heterostructures

Contact Info

Product

Resources

About

Free-exciton energy spectrum in GaAs

Cited by 112 publications

References 21 publications

Enhancement of the Excitonic Photoluminescence in n+/i-GaAs by Controlling the Thickness and Impurity Concentration of the n+Layer

Enhancement of the Excitonic Photoluminescence in n+/i-GaAs by Controlling the Thickness and Impurity Concentration of the n+Layer

Enhancement of excitonic photoluminescence in silicon-dopedn+/i-GaAs structures

Light–matter interaction in transition metal dichalcogenides and their heterostructures

Contact Info

Product

Resources

About

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

Enhancement of excitonic photoluminescence in silicon-dopedn⁺/i-GaAs structures