Freestanding circular GaN grating fabricated by fast-atom beam etching

Wang, Yongjin; Hu, Fangren; Wakui, M.; Hane, Kazuhiro

doi:10.1007/s00339-009-5376-y

Cited by 7 publications

(5 citation statements)

References 14 publications

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“…that of nanoscale SiO 2 mask lines, the dry etching process such as fast atom beam [13] and deep reactive ion etching [14] should be employed.…”

Section: Resultsmentioning

confidence: 99%

“…In the bottom-up approach, a high level of composition and orientation control in semiconducting nanowires can be achieved by epitaxial growth [5][6]. In the top-down approach, the crystal-single silicon nanowires can be fabricated by advanced lithography techniques such as electron beam lithography (EBL) or focused ion beam lithography and dry etching using fast atom beam (FAB) or deep reactive ion etching (D-RIE) [9][10][11][12][13]. In the top-down approach, the crystal-single silicon nanowires can be fabricated by advanced lithography techniques such as electron beam lithography (EBL) or focused ion beam lithography and dry etching using fast atom beam (FAB) or deep reactive ion etching (D-RIE) [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of single-crystal silicon nanowires based on surface wet adhesion

Chu

Nguyen

et al. 2015

Materials Letters

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“…that of nanoscale SiO 2 mask lines, the dry etching process such as fast atom beam [13] and deep reactive ion etching [14] should be employed.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication of single-crystal silicon nanowires based on surface wet adhesion

Chu

Nguyen

et al. 2015

Materials Letters

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“…In our previous work, totally freestanding GaN microstructures were generated by a combination of fast atom beam (FAB) etching of GaN and deep reactive ion etching (DRIE) of silicon [11,12]. With Cl 2 gas as the process gas, FAB etching can effectively manufacture GaN to get nanometer scale features.…”

Section: Rie Of Gan and Frontside Dry-release Of Silicon Suspendedmentioning

confidence: 99%

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

Wang

Sasaki

et al. 2011

J. Micromech. Microeng.

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We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform.

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“…With an etching mask of silica nanospheres, the nanostructure patterns were transferred to the GaN slab by FAB etching [22][23][24], and the residual silica particles were finally removed in buffered HF solution, generating subwavelength nanostructures on the freestanding GaN slab (steps e). Although the freestanding GaN slab has a small downward deflection due to the residual stress [22,24], subwavelength texturing is well conducted in the whole device area. The emission properties of fabricated samples are characterized using a microphotoluminescence (micro-PL) system at room temperature.…”

Section: Device Fabricationmentioning

confidence: 99%

Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab

Wang¹,

Hu²,

Kanamori³

et al. 2010

Opt. Express

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We develop a novel way to fabricate subwavelength nanostructures on the freestanding GaN slab using a GaN-on-silicon system by combining self-assemble technique and backside thinning method. Silicon substrate beneath the GaN slab is removed by bulk silicon micromachining, generating the freestanding GaN slab and eliminating silicon absorption of the emitted light. Fast atom beam (FAB) etching is conducted to thin the freestanding GaN slab from the backside, reducing the number of confined modes inside the GaN slab. With self-assembled silica nanospheres acting as an etching mask, subwavelength nanostructures are realized on the GaN surface by FAB etching. The reflection losses at the GaN interfaces are thus suppressed. When the InGaN/GaN multiple quantum wells (MQWs) active layers are excited, the light extraction efficiency is significantly improved for the freestanding nanostructured GaN slab. This work provides a very practical approach to fabricate freestanding nanostructures on the GaN-on-silicon system for further improving the light extraction efficiency.

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Freestanding circular GaN grating fabricated by fast-atom beam etching

Cited by 7 publications

References 14 publications

Fabrication of single-crystal silicon nanowires based on surface wet adhesion

Fabrication of single-crystal silicon nanowires based on surface wet adhesion

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab

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