Freestanding GaN Resonant Gratings at Telecommunication Range

Wang, Yongjin; Hu, Fangren; Wakui, M.; Hane, Kazuhiro

doi:10.1109/lpt.2009.2024221

Cited by 13 publications

(9 citation statements)

References 20 publications

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“…Various freestanding GaN gratings are fabricated on a GaN-on-silicon substrate by a combination of EB lithography, FAB etching of GaN and DRIE of silicon [20]. Figure 2 illustrates scanning electron microscope (SEM) images of fabricated freestanding GaN gratings.…”

Section: Resultsmentioning

confidence: 99%

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Wang

Hane

2011

Nanoscale Res Lett

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We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate.PACS81.05.Ea; 81.65.Cf; 81.15.Hi.

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Section: Resultsmentioning

confidence: 99%

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Wang

Hane

2011

Nanoscale Res Lett

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“…Unlike traditional multilayer dielectric film layers, freestanding structures are more compact, and the lattice mismatch between the GaN and substrate layers can be minimized. [ 13,18 ] For making a freestanding structure, various dry etching techniques have been used: wet chemical etching, deep reactive ion etching, fast atom beam (FIB) etching, and inductively coupled plasma reactive ion etching (ICP‐RIE). Among all, the ICP‐RIE method is widely popular.…”

Section: Introductionmentioning

confidence: 99%

“…minimized. [13,18] For making a freestanding structure, various dry etching techniques have been used: wet chemical etching, deep reactive ion etching, fast atom beam (FIB) etching, and inductively coupled plasma reactive ion etching (ICP-RIE). Among all, the ICP-RIE method is widely popular.…”

Section: Introductionmentioning

confidence: 99%

High‐Electron‐Mobility Transistor‐Inspired Freestanding AlGaN/GaN/AlN Optical Waveguide for High‐Pressure Sensing Applications

Nallusamy

Singhal

Sharma

et al. 2023

Physica Status Solidi (a)

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Herein, a high‐pressure sensor based on freestanding high‐electron‐mobility transistor (HEMT)‐inspired optical waveguide comprising AlGaN/GaN/AlN layers on silicon carbide (SiC) substrate is proposed and studied for harsh environment applications using finite element method (FEM). The working principle of the sensor is based on the change in birefringence due to applied pressure. Further, the transmission spectra for different wavelengths are evaluated. For the best possible outcomes, the dip wavelengths under different values of pressure are tracked and studied for different gallium nitride (GaN) core thicknesses. After optimizing GaN core thickness and AlGaN ratio, the sensor displays a good linear response within the pressure range of 90–150 MPa. The two dip wavelength shifts demonstrate maximum spectral sensitivities of −209.6 and 180 pm MPa−1, respectively, for the pressure range of 90–150 MPa within the communication wavelength regime of 1500–1600 nm. By considering the features such as cost‐effectiveness, portability, simple design, and easy detection process, the proposed pressure sensor is optimum for harsh environment measurements and studies.

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“…Freestanding III-nitride structures have been achieved through removing the silicon substrate beneath the device region from the backside [23]. Based on silicon backside technology, guided-mode resonant III-nitride gratings were designed by using a rigorous coupled wave analysis method and fabricated by fast atom beam (FAB) etching, where the electron beam (EB) resist served as an etching mask and FAB etching used neutral particles to process III-nitride components.…”

Section: Introductionmentioning

confidence: 99%

The resonant III-nitride grating reflector

Wang¹,

Wu²,

Tanae³

et al. 2011

J. Micromech. Microeng.

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We report here on the fabrication of a guided-mode resonant III-nitride grating reflector on a silicon substrate. In addition to compensating the residual stress of III-nitride layers, hafnium oxide (HfO2) film also serves as a hard mask during inductively coupled plasma reactive ion etching of III-nitride layers. The silicon substrate underneath the III-nitride gratings is etched and thus the III-nitride gratings are released and freely suspended with air as low refractive index materials on the top and bottom. The guided-mode resonances that are affected by the grating period, duty ratio, polarization and effective refractive index are experimentally characterized in the reflectance measurements. These works open the possibility of fabricating resonant III-nitride structures on the silicon substrate for further tunable III-nitride optical devices and integrated optics.

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Freestanding GaN Resonant Gratings at Telecommunication Range

Cited by 13 publications

References 20 publications

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

High‐Electron‐Mobility Transistor‐Inspired Freestanding AlGaN/GaN/AlN Optical Waveguide for High‐Pressure Sensing Applications

The resonant III-nitride grating reflector

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