Frequency control of MOSFET full bridge power inverter for maximizing output power to megasonic transducer at 3 MHz

Mizutani, Y.; Suzuki, Tsuneyuki; Ikeda, Hiroaki; Yoshida, H.; Shinohara, S.

doi:10.1109/ias.1998.729758

Cited by 18 publications

(5 citation statements)

References 9 publications

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“…This series resonator is utilized as bandpass filter to output sinusoidal wave. Its design and structure are very simple compared to implementing a filter network such as a Chebyshev filter as [13], [14].…”

Section: Design For Harmonics Suppressionmentioning

confidence: 99%

13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’

Oyane

Thilak

Masuda

et al. 2022

IEICE Trans. Electron.

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This paper proposes a topology of high power, MHzfrequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hardswitching also and reduction of power efficiency. The proposed topology overcomes these difficulties by utilizing a proposed 'L-S network'. This network is effective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high efficiency is achieved in the power circuit in 471W experimental prototype.

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Section: Design For Harmonics Suppressionmentioning

confidence: 99%

13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’

Oyane

Thilak

Masuda

et al. 2022

IEICE Trans. Electron.

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“…1) was invented by Rosen in mid 1950s [1]. The important advantages of PT include no electromagnetic noises, high efficiency, high power density, low power losses, and EMI-free [2]. The biggest advantage of adopting a PT in the backlight module than that of the electromagnetic transformers is low energy loss [3].…”

Section: Introductionmentioning

confidence: 99%

The effect of environmental temperature on the performance of piezoelectric transformer

Chen

Lee

2008

Behavior and Mechanics of Multifunctional and Composite Materials 2008

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Over the years, piezoelectric transformer (PT) was used in inverters to drive cold cathode fluorescent lamps (CCFL). As it stands now, CCFL still was considered to be the primary light source for the backlight module of LCD TVs. It is know that transformers play important role in backlight module performance. Since the LCD TV might be sold to different parts of the world and the inverters as well as the power boards do produce heat, the piezoelectric transformers are expected to perform well in vastly different environmental temperatures. Since temperature will influence the material properties, the resonant frequency of piezoelectric transformer gets affected easily by the environmental temperature. In this paper, we operated the Rosen-type piezoelectric transformers of various thicknesses in temperatures such as 25, 50, 70, and 90℃ to examine the temperature dependency of the resonant frequency, the power efficiency, the step-up ratio, and the output current with CCFL as the loads. Simulation was also done to study the trend of resonant frequency variations in different temperatures. Furthermore, the effect of environmental temperature to the performance of various thicknesses of Rosen-type PT was examined. The relationship between the CCFL used and the operating temperature was investigated with an attempt to explore future applications.

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“…Generally, traditional inverter architectures for industrial high power ultrasound systems are including half-bridge, full-bridge and push-pull [1][2][3] circuits, which are based on conventional complex class AB or B inverters [4]. To develop a simple and efficient inverter structure therefore becomes very important and attractive for the high power ultrasound systems.…”

Section: Introductionmentioning

confidence: 99%

Ultrasonic Welding Driver with Class-E Inverter Design

Yarn

Wu²,

Hsing

et al. 2011

AMR

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Frequency control of MOSFET full bridge power inverter for maximizing output power to megasonic transducer at 3 MHz

Cited by 18 publications

References 9 publications

13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’

13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’

The effect of environmental temperature on the performance of piezoelectric transformer

Ultrasonic Welding Driver with Class-E Inverter Design

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