Frequency Dependence of Magnetoimpedance in Spin Tunneling Junctions

The rf magneto-impedance effect of spin tunneling junctions Co/Al-oxide/Co fabricated on glass substrate by ion-beam sputtering is investigated. To measure junction impedance, a measurement method is established. Junction impedance can be determined from the voltages of two cobalt electrodes and a standard resistor at room temperature over a frequency range of 0.1–100 MHz using a lock-in amplifier by taking input impedance into account. The real part of magneto-impedance ratio exhibits a positive value at frequencies less than the roll-off frequency and a negative value at frequencies higher than the roll-off frequency. Furthermore, the imaginary part of the magneto-impedance ratio is found to be positive across the entire frequency region measured and to approach zero at high frequencies.

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Radio frequency magneto-impedance effect in spin tunneling junctions

Hirabayashi

Kaiju

Shiiki

2004

Review of Scientific Instruments

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Bias voltage dependence of tunnel magnetoimpedance in AlOx-based magnetic tunnel junctions

Kuo

Han

et al. 2011

Journal of Applied Physics

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This paper studies the bias voltage dependence of tunnel magnetoimpedance in two types of AlOx-based magnetic tunnel junctions (i.e., CoFeB/AlOx/CoFeB and CoFeB/AlOx). The impedance spectra methodology is applied to characterize the transport properties and barrier/interface behavior of the tunnel junctions. The bias voltage dependence of the impedance spectra shows different behaviors for each type of junction, thus contributing different physical parameters to the equivalent circuit model. The results indicate that the interplay of the spin dynamics and dielectric relaxation may be attributed to the magnetic tunnel dynamics. The physical parameters obtained from the equivalent circuit analysis provide information on the spin-dependence tunnel junctions for devices applications.

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Study of Spin Tunnel Junctions using AlOx Insulating Barrier Fabricated by Reactive Sputtering

Harada¹,

Shiiki²

2005

J. Vac. Soc. Jpn.

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Frequency Dependence of Magnetoimpedance in Spin Tunneling Junctions

Cited by 3 publications

References 8 publications

Radio frequency magneto-impedance effect in spin tunneling junctions

Radio frequency magneto-impedance effect in spin tunneling junctions

Bias voltage dependence of tunnel magnetoimpedance in AlOx-based magnetic tunnel junctions

Study of Spin Tunnel Junctions using AlOx Insulating Barrier Fabricated by Reactive Sputtering

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