International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
DOI: 10.1109/iedm.2001.979501
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Frequency dependence of soft error rates for sub-micron CMOS technologies

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Cited by 56 publications
(20 citation statements)
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“…Since the charge collection process is fairly independent of the node size, as reported in [25,26], a good approximation to the collected charge probability density function is given by an exponential function of the form prob(Q) = a exp(ÀbQ), where a and b are fitting parameters. By replacing prob(Q) into Eq.…”
Section: Soft Error Rate (Ser)mentioning
confidence: 99%
See 1 more Smart Citation
“…Since the charge collection process is fairly independent of the node size, as reported in [25,26], a good approximation to the collected charge probability density function is given by an exponential function of the form prob(Q) = a exp(ÀbQ), where a and b are fitting parameters. By replacing prob(Q) into Eq.…”
Section: Soft Error Rate (Ser)mentioning
confidence: 99%
“…The SER of a circuit is defined as the sum of SER n over the total number of nodes [25]. There are two sensitive nodes in the 6T and 8T-cells: Node 1 and Node 2 ( Fig.…”
Section: Soft Error Rate (Ser)mentioning
confidence: 99%
“…Roughly speaking, flip-flops can latch SEUs every time the latching clock-edge is triggered. Therefore, an increase in operating frequency increases the frequency of latching opportunities [111]. Additionally, as power-supply voltage decreases and gate sizes shrink, fewer SEUs are expected to be attenuated.…”
Section: Additional Masking Mechanismsmentioning
confidence: 99%
“…Occurrence of SEUs in SRAM memories is increasing and becoming more critical as technology continues to shrink [7], [12], [13]. Shivakumar et al have predicted that an SER of combinational logic would increase to be comparable to the SER per chip of memory components in the future [14].…”
Section: Introductionmentioning
confidence: 97%