Frequency-dependent Capacitance-Voltage and Conductance-Voltage Characteristics of Low-dielectric-constant SiOC(-H) Thin Films Deposited by Using Plasma-enhanced Chemical Vapor Deposition

Choi, Chi Kyu; Kim, Chang Young; Lee, Heang Seuk; Woo, Jiwon; Navamathavan, R.; Lee, Kwang-Man; Hyun, Myung Taek

doi:10.3938/jkps.57.1976

Cited by 16 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Hence the equivalent capacitance measured during accumulation would be smaller at higher frequencies. This phenomenon is common in metal-insulator-semiconductor (MIS) capacitors [22] and reasonably aligns with the measured R s data for these Co-Si MOS capacitors (figure S2, available from stacks.iop.org/SST/27/065012/mmedia). It may be assumed that the resistive nature of Co-Si is a bit different than normal metal contacts and contributes to the frequency dependence of accumulation region capacitance.…”

Section: Resultssupporting

confidence: 86%

Work function characterization of solution-processed cobalt silicide

Ullah

Robinson

Hoey

et al. 2012

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Cobalt silicide thin films were prepared by spin-coating liquid cyclohexasilane-based inks onto silicon substrates followed by a thermal treatment. The work function of the solution-processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoemission spectroscopy (UPS). Variable frequency C-V of MOS structures with silicon oxide layers of variable thickness showed that solution-processed metal silicide films exhibit a work function of 4.36 eV with one Co-Si film on Si 1 0 0 giving a UPS-derived work function of 4.80 eV. Similar work function measurements were collected for vapor-deposited MOS capacitors where Al thin films were prepared according to standard class 100 cleanroom handling techniques. In both instances, the work function values established by the electrical measurements were lower than those measured by UPS and this difference appears to be a consequence of parasitic series resistance. Semicond. Sci. Technol. 27 (2012) 065012 S S Ullah et al Patterned Al (~250 nm) or Co-Si (~80 nm) gate SiO 2 gate dielectric (~20-250 nm) B-doped p-type Si wafer Al back contact (250 nm)

show abstract

Section: Resultssupporting

confidence: 86%

Work function characterization of solution-processed cobalt silicide

Ullah

Robinson

Hoey

et al. 2012

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO₂ Ferroelectric Film

Lee

Kim

Park

et al. 2022

Adv Elect Materials

View full text Add to dashboard Cite

Ti layer inserted in the TiN gate electrode effectively scavenges the oxygen in the low‐k interfacial SiO2 of the metal–ferroelectric–insulator–semiconductor (MFIS) capacitors with the ferroelectric Al‐doped HfO2 (HAO) thin film. The scavenging effect increases remanent polarization (Pr) and reduces coercive voltage (Vc) and capacitance equivalent thickness (CET) of the HAO films, particularly when the MFIS capacitor is annealed at 800 °C. Additionally, frequency dispersion of capacitance characteristics and interface trap density (Dit) calculations reveal that actively‐triggered oxygen‐scavenging effects also reduce defect or trap‐induced degradation. The Ti‐inserted MFIS structure exhibits fatigue‐free endurance and relatively low leakage current characteristics as compared to a structure without the Ti scavenging layer in high annealing temperature conditions required for crystallization of the HAO ferroelectric films.

show abstract

Electrical Performance of Protein-Based Flexible MIM Structure Fabricated at Room Temperature for Proteotronic Applications

Guhathakurata,

Manik,

Mallik

2024

Springer Proceedings in Physics

View full text Add to dashboard Cite

Frequency-dependent Capacitance-Voltage and Conductance-Voltage Characteristics of Low-dielectric-constant SiOC(-H) Thin Films Deposited by Using Plasma-enhanced Chemical Vapor Deposition

Cited by 16 publications

References 1 publication

Work function characterization of solution-processed cobalt silicide

Work function characterization of solution-processed cobalt silicide

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO₂ Ferroelectric Film

Electrical Performance of Protein-Based Flexible MIM Structure Fabricated at Room Temperature for Proteotronic Applications

Contact Info

Product

Resources

About

Frequency-dependent Capacitance-Voltage and Conductance-Voltage Characteristics of Low-dielectric-constant SiOC(-H) Thin Films Deposited by Using Plasma-enhanced Chemical Vapor Deposition

Cited by 16 publications

References 1 publication

Work function characterization of solution-processed cobalt silicide

Work function characterization of solution-processed cobalt silicide

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film

Electrical Performance of Protein-Based Flexible MIM Structure Fabricated at Room Temperature for Proteotronic Applications

Contact Info

Product

Resources

About

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO₂ Ferroelectric Film