Frequency-dependent electrical characteristics of GaAs MESFETs

Golio, J.M.; Miller, M.; Maracas, G. N.; Johnson, David A.

doi:10.1109/16.108182

Cited by 131 publications

(47 citation statements)

References 13 publications

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“…All the parameters defining I gs and I gd (12) were considered to be ambient temperature-dependent. For this case their temperature dependence was assumed to be of the form:…”

Section: Incorporation Of Thermal Effects Into Gate-source and Gate-dmentioning

confidence: 99%

“…There is no doubt that the significant dependence of the MESFET and HEMT I-V characteristics on frequency has played a major role in this situation. The inter-dependence between trapping effects and the thermal conditions of the device (whether they be through self-heating or ambient) has also added to the simulation difficulties [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

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NONLINEAR MODELING OF TRAPPING AND THERMAL EFFECTS ON GaAs AND GaN MESFET/HEMT DEVICES

Chaibi¹,

Fernández

Mimouni³

et al. 2012

PIER

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Abstract-A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power (GaAs) and high power (GaN) devices with equal success. The model provides accurate simulation of the static (DC) and dynamic (Pulsed) I-V characteristics of the device over a wide bias and ambient temperature range (from −70 • C to +70 • C) without the need of an additional electro-thermal sub-circuit. This is an important issue in high power GaN HEMT devices where self-heating and current collapse due to traps is a more serious problem. The parameter extraction strategy of the new model is simple to implement. The robustness of the model when performing harmonic balance simulation makes it suitable for RF and microwave designers. Experimental results presented demonstrate the accuracy of the model when simulating both the small-signal and largesignal behavior of the device over a wide range of frequency, bias and ambient temperature operating points. The model described has been implemented in the Advanced Design System (ADS) simulator to validate the proposed approach without convergence problems.

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“…All the parameters defining I gs and I gd (12) were considered to be ambient temperature-dependent. For this case their temperature dependence was assumed to be of the form:…”

Section: Incorporation Of Thermal Effects Into Gate-source and Gate-dmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

NONLINEAR MODELING OF TRAPPING AND THERMAL EFFECTS ON GaAs AND GaN MESFET/HEMT DEVICES

Chaibi¹,

Fernández

Mimouni³

et al. 2012

PIER

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show abstract

“…Intrinsic circuit parameters: Cg,, Cgd,9m Ri and Rd are obtained from conventional small-signal MESFET analysis in the absence of traps and considering the effects of velocity saturation. The other circuit parameters are obtained from the reported experimental data and are as follows: R, = 6 Q, Lg = 0.055 nH, Rd 70 9, Ld = 0.307 nil, R. = 90 Q, L, = 0.027 nH and C& = 0.040 pF [11,12]. A thermal simulator is incorporated to calculate the operating temperature for a given power level by solving Laplace's equation.…”

Section: Discussionmentioning

confidence: 99%

“…Temperature and field dependent transport parameters are obtained from an ensemble Monte Carlo simulation [8,9]. Following the treatment reported by Golio et al [12] the effects of traps are incorporated through the parameters C,, gm and Rd. These parameters are obtained once the underlying physical processes governing trap dynamics are formulated.…”

Section: Discussionmentioning

confidence: 99%

“…Besides, GaN based devices are plagued by traps that results in performance deteriorating gate-and drain-lag transients and current collapse in the I-V characteristics [10,11]. Trapping effects are dependent upon the applied signal frequency and their effect is more pronounced for frequencies less than the transconductance and output resistance dispersion frequencies [12,13]. The dispersion frequencies are related to the detrapping time constants, which are critically dependent upon the junction temperature.…”

Section: Ps-2mentioning

confidence: 99%

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Thermal and trapping effects in GaN-based MESFETs

Islam

Anwar

Proceedings. IEEE Lester Eastman Conference on High Performance Devices

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RF power performances of GaN-MESFETs are reported using a physics-based model that incorporates dispersion in the output resistance and transconductance due to traps and thermal effects. Calculated I-V characteristics are in excellent agreement with the measured results. Taking thermal effects into account the maximum output power of a 0.3gan x 100arn GaN MESFET is 22dBm at a power gain of 4.2dB at 4GHz. The corresponding quantities are 27dBm and 6.4dB, respectively if a constant channel temperature of 300K is assumed. At elevated temperatures compression in output power, gain and PAE is less in MESFETs with longer gate lengths.

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Modeling, design, and analysis of the illuminated MESFET and the illuminated HMIC oscillator by simulator

Shiomi

Kawasaki

2000

Electron. Comm. Jpn. Pt. II

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A large signal model of an optically illuminated MESFET and a method for design and analysis of an optically controlled HMIC oscillator based on the proposed model are reported in this paper. Measured values of the S parameters and dc characteristics of the optically illuminated MESFET are described. A modeling of the optically illuminated MESFET is described in detail, and an optically illuminated MESFET model containing an optical intensity parameter is proposed. The Ids‐Vds characteristics and the S parameters computed with this optically illuminated MESFET model are found to agree well with the measured values. A simulation analysis is presented for the optical control of oscillation frequencies and the optical pulse modulation experiment. The computed output spectra of the optically pulse modulated oscillator agree well with the measured results. It is confirmed that the microwave is modulated by light. Further, the envelope distortion is studied, and we investigate how illumination of the high‐speed optical pulse affects the envelope of the MESFET oscillator output and what the applicable maximum bit rate is. © 2000 Scripta Technica, Electron Comm Jpn Pt 2, 83(5): 1–12, 2000

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Frequency-dependent electrical characteristics of GaAs MESFETs

Cited by 131 publications

References 13 publications

NONLINEAR MODELING OF TRAPPING AND THERMAL EFFECTS ON GaAs AND GaN MESFET/HEMT DEVICES

NONLINEAR MODELING OF TRAPPING AND THERMAL EFFECTS ON GaAs AND GaN MESFET/HEMT DEVICES

Thermal and trapping effects in GaN-based MESFETs

Modeling, design, and analysis of the illuminated MESFET and the illuminated HMIC oscillator by simulator

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