Frequency-dependent loss in amorphous semiconductors

Long, A. R.

doi:10.1080/00018738200101418

Cited by 1,210 publications

(524 citation statements)

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“…Several pieces of information related to the dependence of σ on frequency can be drawn from this data: (i) σ remains constant up to a certain frequency f c ; (ii) f c decreases with decreasing temperature; and (iii) for f > f c , σ follows a power-law dependence of the form σ ∝ f s . These observations indicate that the frequency-dependent conductivity in CVD-grown, large area MoS 2 can be explained on the basis of a universal ac conduction expression seen in a variety of disordered solids [18,21,23,24]:…”

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confidence: 99%

“…The variation of s with temperature for a variety of disordered materials was extensively analyzed in the past and is shown to be critically dependent on the ac conduction mechanism [20][21][22][23][24][25]. For example, in cases where the conductivity is believed to be due to phonon-assisted tunneling between defect states, or the so-called quantum-mechanical tunneling (QMT) phenomena, the ac conductivity σ (ω) takes the functional form [18,[20][21][22][23][24][25][26][27][28] …”

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confidence: 99%

“…Therefore, understanding the correlation between the structure and physical properties of these materials is of fundamental interest. In particular, studying the electrical conduction mechanisms [20][21][22][23][24][25][26][27][28] of 2D layered solids is of major importance, since it would play a relevant role in many of the envisioned optoelectronic applications based on these materials.…”

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Universal ac conduction in large area atomic layers of CVD-grown MoS2

et al. 2014

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Here, we report on the ac conductivity [σ (ω); 10 mHz < ω < 0.1 MHz] measurements performed on atomically thin, two-dimensional layers of MoS 2 grown by chemical vapor deposition (CVD). σ (ω) is observed to display a "universal" power law, i.e., σ (ω) ∼ ω s measured within a broad range of temperatures, 10 K < T < 340 K. The temperature dependence of ''s" indicates that the dominant ac transport conduction mechanism in CVD-grown MoS 2 is due to electron hopping through a quantum mechanical tunneling process. The ac conductivity also displays scaling behavior, which leads to the collapse of the ac conductivity curves obtained at various temperatures into a single master curve. These findings establish a basis for our understanding of the transport mechanism in atomically thin, CVD-grown MoS 2 layers.

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Universal ac conduction in large area atomic layers of CVD-grown MoS2

et al. 2014

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“…In the QMT model, the relaxation time is given by τ ∝ exp(2αR) where α is the decay constant for the s-like wavefunction assumed to describe the localized states and R is the distance separating localized states. The real part of the AC conductivity due to electron tunnelling can be calculated [15,16] using σ (ω) = π 4 384…”

Section: Quantum-mechanical Tunnelling Modelsmentioning

confidence: 99%

AC conductivity of unconventional bismuth cuprate glass

Hazra¹,

Ghosh²

1997

J. Phys.: Condens. Matter

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Abstract. The frequency dependence of the AC electrical conductivity of different compositions of bismuth cuprate glasses has been presented in the temperature range 80-400 K. The conductivity data have been analysed in terms of different theoretical models to determine the possible conduction mechanism. Analysis of the conductivity data and the frequency exponent shows that the correlated barrier hopping of electrons between Cu + and Cu 2+ ions in the glasses is the most favourable mechanism for AC conduction. The different parameters obtained from the fits of this model to the experimental data are reasonable. The high value of the dielectric constant observed in this glass system can be attributed to the influence of the high polarizability of the Bi 3+ ions of the unconventional network former Bi 2 O 3 on the AC response.

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“…Such a cross-over produces a peak in the imaginary part of the dielectric function, [r(x) 2 r dc ]/x. This so-called ''loss peak'' occurs at, or near [73,74], x c .…”

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Relevance of percolation theory to power‐law behavior of dynamic processes including transport in disordered media

Hunt

2009

Complexity

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P ower-law behavior seems ubiquitous in nature as well as in human endeavors. Flood statistics [1][2][3][4][5], water storage [6], drainage basin organization [7], relationships between channel dimensions and flow [8], extreme precipitation events [9], wind and weather fluctuations [10,11], stock and commodity markets fluctuations [12,13] , have all been noted to obey various power laws. Many physicists have searched for unifying concepts to explain such ubiquity. Perhaps, however, powerlaw behavior is not quite as universal as thought. Multifractal distributions originating from cascade processes as a related, but somewhat more complex, organizing principle have often been proposed to be the appropriate universal description [33, 34]. Some [35][36][37] have questioned whether a ''class'' of stretched exponential functions might better represent a larger or smaller fraction of the data. In the ac conductivity of disordered insulators, for example, several other frequencydependences [38-40], universal or not, have been suggested. This small sample of alternate ideas need not imply that alternative scenarios are always correct either. But simply because it is often asserted that nature follows power laws does not require such; in most cases the range and quality of data are probably not sufficient to distinguish the subtle differences between the various proposed distributions. But the recognition of the simplicity of the explanation that self-similar geometrical structures [41] could be the basis of so many geophysical manifestations of apparent power laws has certainly provided impetus to the interpretation that a large number of natural phenomena do follow power-law behavior.In the case that one believes that the observed behavior conforms to true power laws, what kind of underlying mechanism should one seek? At least six such unifying concepts, nonlinear dynamics (chaos) [42], self-organized criticality [43], hierarchical dynamics [44], highly optimized tolerance [45], minimum effort

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Frequency-dependent loss in amorphous semiconductors

Cited by 1,210 publications

References 76 publications

Universal ac conduction in large area atomic layers of CVD-grown MoS2

Universal ac conduction in large area atomic layers of CVD-grown MoS2

AC conductivity of unconventional bismuth cuprate glass

Relevance of percolation theory to power‐law behavior of dynamic processes including transport in disordered media

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