2014
DOI: 10.1103/physrevb.89.125422
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Universal ac conduction in large area atomic layers of CVD-grown MoS2

Abstract: Here, we report on the ac conductivity [σ (ω); 10 mHz < ω < 0.1 MHz] measurements performed on atomically thin, two-dimensional layers of MoS 2 grown by chemical vapor deposition (CVD). σ (ω) is observed to display a "universal" power law, i.e., σ (ω) ∼ ω s measured within a broad range of temperatures, 10 K < T < 340 K. The temperature dependence of ''s" indicates that the dominant ac transport conduction mechanism in CVD-grown MoS 2 is due to electron hopping through a quantum mechanical tunneling process. T… Show more

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Cited by 27 publications
(30 citation statements)
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“…10. It is well known that the conductivity mechanism in any material could be understood from the temperature dependent behavior of n. To ascertain the electrical conduction mechanism in the materials, various models based on the variation of frequency exponent with temperature and frequency have been proposed such as quantum mechanical tunneling (QMT) model, [30][31][32] where conductivity is believed to be due to phonon-assisted tunneling between defect states; the overlapping large-polaron tunneling (OLPT) model, 31,33 in which tunneling of polarons is the dominant mechanism, here the large polaron wells at two sites overlap, thus reducing the polaron-hopping energy; and the correlated barrier hopping (CBH) model, 30,31 according to which the charge transport occurs between localized states due to hopping over the potential barriers. The temperature variation of exponent n correlates the ac conductivity mechanism as discussed below: 22 1.…”
Section: Ac Conductivitymentioning
confidence: 99%
“…10. It is well known that the conductivity mechanism in any material could be understood from the temperature dependent behavior of n. To ascertain the electrical conduction mechanism in the materials, various models based on the variation of frequency exponent with temperature and frequency have been proposed such as quantum mechanical tunneling (QMT) model, [30][31][32] where conductivity is believed to be due to phonon-assisted tunneling between defect states; the overlapping large-polaron tunneling (OLPT) model, 31,33 in which tunneling of polarons is the dominant mechanism, here the large polaron wells at two sites overlap, thus reducing the polaron-hopping energy; and the correlated barrier hopping (CBH) model, 30,31 according to which the charge transport occurs between localized states due to hopping over the potential barriers. The temperature variation of exponent n correlates the ac conductivity mechanism as discussed below: 22 1.…”
Section: Ac Conductivitymentioning
confidence: 99%
“…The variation of s with temperature is shown in the inset of Figure C. It is clear from the plot that s is almost independent of temperature within the studied temperature range (297–393 K) with a value of s ≈0.58 (±0.02). The temperature‐independence of s firmly indicates the incidence of phonon‐assisted simple quantum tunnelling between the localised defect states and σ′ ( ω )takes the functional forms given in Equation (): σ'ω=ce2kBTaNEF2ωRω4 …”
Section: Resultsmentioning
confidence: 99%
“…This power law equation [Eq. (3)]is widely used to describe the conductivity spectra below microwave frequency range . The conductivity isotherms are fitted to [Eq.…”
Section: Resultsmentioning
confidence: 99%
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