Frequency Multiplier and Mixer MMICs Based on a Metamorphic HEMT Technology Including Schottky Diodes

Thome, Fabian; Ture, Erdin; Iannucci, R.; Leuther, A.; Schafer, F.; Navarrini, A.; Serres, Patrice

doi:10.1109/access.2020.2965823

Cited by 7 publications

(7 citation statements)

References 22 publications

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“…Having a metamorphic buffer layer and an indium phosphide (InP) epitaxial layer on a gallium arsenide (GaAs) substrate, mHEMT imparts additional advantages to each device such as excellent device characteristics, due to InP, and ease of processing due to GaAs. Recently, many reports on MMIC using mHMET have been reported, and foundry services, in which the mHEMT technology is used, have been conducted [10][11][12][13]. In this paper, we show the characteristics of a 0.1-μm mHEMT device manufactured by ETRI in-house mHEMT process with a 4-inch wafer.…”

Section: Introductionmentioning

confidence: 99%

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

et al. 2020

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We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.

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Section: Introductionmentioning

confidence: 99%

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

et al. 2020

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“…

C_{j} ((), V) = ({, \begin{array}{l} C_{r} ((), V) V < {aV}_{0} \\ C_{r} ((), {italicaV}_{0}) + {C^{'}}_{r} ((), {italicaV}_{0}) ((), V - {aV}_{0}) V \geq {aV}_{0} \end{array})

where α is a constant between 0 and 1, Cr ( V ) is given by Equation 2, and the extrapolation point is chosen as αV 0 . Equation 3 indicates that the junction capacitance keeps increasing linearly when the applied voltage V exceeds αV 0 , which is inconsistent with the actual C‐V characteristics of the diode 17 . On the other hand, the special effects of Schottky junction under terahertz frequency, such as saturation effect, will cause C‐V characteristics at terahertz frequencies to deviate from C‐V characteristics at DC condition.…”

Section: Modeling Of the Diode By Physical‐based Sddmentioning

confidence: 96%

“…As for the nonlinear part, which refers to the intrinsic Schottky junction, it is modeled directly by the SPICE model 13 of diode in Agilent's Advanced Design Systems (ADS). Based on the modeling methods above, depicted in Figure 1A, various frequency multipliers working at millimeter and terahertz band have been demonstrated successfully 13–17 . However, the modeling method directly based on SPICE model of diode still has some issues: Firstly, SPICE model adopts linear continuation for characterizing nonlinear junction capacitance of diode when the applied voltage exceeds the potential barrier voltage V bi , which is found to be inconsistent with the measured C‐V characteristics 18 .…”

Section: Introductionmentioning

confidence: 99%

A 140 GHz high efficiency frequency doubler based on a physical‐based SDD model of SBD

Yan

Ren

et al. 2021

Circuit Theory & Apps

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Summary In this paper, a physical‐based SDD (symbolically defined devices) model of SBD (Schottky barrier diode) is proposed, in which conventional C‐V characteristics of diode SPICE model are modified by terahertz C‐V characteristics obtained by physical‐based simulation. Detail modeling method and design process are introduced in detail. To verify the accuracy of the SDD model, a 140 GHz high efficiency doubler is designed, fabricated, and measured. The measured maximum efficiency is 34.3% under 90 mW input power, and the 3 dB bandwidth is about 7 GHz, which agrees well with the simulated results. The proposed physical‐based SDD model is demonstrated to be more accurate than traditional diode SPICE model.

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“…The average drain efficiency (E avg ) can be defined as a function of the probability density (Prob(v)), output power (P out ðvÞ) and drain efficiency of PA (E(v)) where v is the supply drain voltage. The definition is as (2).…”

Section: Regression Dnn Design Parametersmentioning

confidence: 99%

“…Analog and radio frequency (RF) mixed-signal circuits could be very challenging and sophisticated designs due to the sensitivity of the performance figures to the used transistors [1,2]. Simulation, modeling, layout generation, and verification of complex designs are becoming more and more complicated [3] due to the nonlinear behavior of active devices such as high-electron-mobility transistors (HEMTs).…”

Section: Introductionmentioning

confidence: 99%

Optimization techniques for analog and RF circuit designs: an overview

Kouhalvandi

Ceylan²,

Özoğuz

2020

Analog Integr Circ Sig Process

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Optimizations have gained much consideration from the researchers working in the domains of analog and radio frequency (RF), recently. Dealing with highly nonlinear behavior of active components and aiming to meet design specifications are common issues in all nonlinear circuit designs. As a consequence and accordingly, many studies have been conducted on diverse optimization methods and algorithms for tackling the design problems and meeting optimal solutions with high accuracy. The main purpose of this article is to provide a comprehensive and systematic literature review for the optimization approaches applied by the researchers for designing various analog and microwave circuits. We focus on considering the existing optimization methods from the newly published optimization methods in the last decade. Thus, this study can guide and enlighten complementary metal-oxide-semiconductor analog and RF microwave circuit designers to consider optimization methods commonly used in both areas and to expand conventional performance figures used in their area.

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Frequency Multiplier and Mixer MMICs Based on a Metamorphic HEMT Technology Including Schottky Diodes

Cited by 7 publications

References 22 publications

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

A 140 GHz high efficiency frequency doubler based on a physical‐based SDD model of SBD

Optimization techniques for analog and RF circuit designs: an overview

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