Frequency Response in p-GaSe Single Crystals ∥ at Different Temperatures

Anis, M. K.; Hashmi, R. A.

doi:10.1002/pssa.2211290134

Cited by 3 publications

(1 citation statement)

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“…Research work on electrical properties of GaSe single crystal and thin films have been reported [5][6][7][8][9][10][11], but still it requires an intensive work to collect more information. Particularly, anisotropic structure, fragility and smooth shining surface sometimes cause serious problems between metal-GaSe contacts, for electrical measurements.…”

Section: -Introductionmentioning

confidence: 99%

Capacitance-voltage behaviour inp-type ɛ-GaSe single crystal ∥c at different temperatures

Anis

Zaidi

1998

Nouv Cim D

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Capacitance-voltage measurements have been carried out on p-type e-GaSe single crystal V c in the temperature range 300 to 360 K, with applied voltages of 21 , 0 and 11 V . The C-V measurements in this temperature range have shown a shift in capacitance C and conductance G to the higher values with an increase in temperature. The depletion layer width W, the Debye length L D and the doping density N a have been worked out and plots of N a vs. W have shown a decrease in W with an increase in temperature. The plots of L D vs. N a vary as 1 ON a 1 O2 , which gives N a L D C 3.3310 11 chargesOm 2 for doping density of 10 16 m 23 .

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Section: -Introductionmentioning

confidence: 99%

Capacitance-voltage behaviour inp-type ɛ-GaSe single crystal ∥c at different temperatures

Anis

Zaidi

1998

Nouv Cim D

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Diffusive barrier in silver phosphate and silver borophosphate glasses

Haque

Hashmi

Anis

1994

Phys. Stat. Sol. (a)

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Dielectric measurements are carried out on [60Ag20-x B20,-(40x) P20,] glasses in the frequency and temperature range to lo5 Hz and 120 to 400 K, respectively. The observed dielectric data show an interfacial barrier at the metal-glass contact and reveal a barrier relaxation timebarrier width d, = 8.8 nm, and dc conductivity odC z 1.67 x R-' m-' for the [60Ag20-8 B,O,-32 P,O,] glass at room temperature. A capacitive contribution from BPO, and PO, groups in the bulk along with an interfacial layer capacitance is suggested to be responsible for the large dispersion observed in C(o). The activation energies for threc different glass compositions are found to be (0.48 0.02), (0.40 f 0.02), and (0.50 f 0.02) eV. ') Karachi 75270, Pakistan. 32*

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