“…Using calculated values for series resistance of the device, the parasitic capacitance was found to be 7.7 pF. High speed operation (>10 GHz) requires the parasitic capacitance to be an order of magnitude lower [46], as well as a reduction in series resistance. The intrinsic 3 dB bandwidths increase with bias current, and intrinsic bandwidths up to 5.87 GHz were found for the device at 55 mA, suggesting 10 Gbit/s direct modulation may be possible.…”