Solution-processable
organic semiconductors having bulky substituent
groups on the π-conjugated skeleton are rapidly gaining attention
for their potential applications to large-area electronics. While
the substituent groups contribute to the good solubility in organic
solvents, they give rise to hopping sites in a thin film, affecting
adversely the charge-carrier transport. As an alternative material,
a solvent-soluble precursor compound with thermally cleavable functional
groups is promising, which can be converted by heat treatment into
a thin film to generate the desired material consisting solely of
conjugated systems. This precursor approach is practically applied
to various thin-film-based devices. The overall process of the thin
film growth, however, remains unrevealed. In the present study, solution-processed
pentacene thin films are prepared from a thermally convertible precursor,
and the structural evolution during the chemical conversion reaction
has been revealed by a combination of cutting-edge analytical tools
of two-dimensional X-ray diffraction (2D-GIXD) and p-polarized multiple-angle
incidence resolution spectrometry (pMAIRS). The highlight is that
pentacene is crystallized in a stepwise manner in the thermally converted
films, which is substantially different from a typical growth process.
In addition, influences of the oxidation reaction of pentacene on
the molecular arrangement are also discussed quantitatively. This
study provides a fundamental schematic of thin films grown by the
precursor method.