Fringe capacitance of a parallel-plate capacitor

Thompson, Frank; Gagon, J K

doi:10.1088/0031-9120/17/2/412

Cited by 7 publications

(5 citation statements)

References 5 publications

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“…However, for the HTCC test device, the metallization area is relatively smaller and the dielectric is relatively thicker (23.2 mm wide compared with 1.7 mm thick), so the edge effect is considered [12,13], in order to make the calculated dielectric constant be more accurate. The consideration of edge effect introduces a constant factor of 0.88 to the dielectric constant of HTCC alumina.…”

Section: Methodsmentioning

confidence: 99%

Electrical Performance of Cofired Alumina Substrates at High Temperatures

Chen¹

2013

Journal of Microelectronics and Electronic Packaging

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AbstractÀA 96% polycrystalline alumina (Al 2 O 3 ) based prototype packaging system with Au thick-film metallization successfully facilitated long term testing of high temperature SiC electronic devices for over 10,000 h at 5008C previously. However, the 96% Al 2 O 3 chip-level packages of this prototype system were not fabricated via a commercial cofire process, which would be more suitable for large scale commercial production. The cofired alumina materials adopted by the packaging industry today usually contain several percent of glass constituents to allow cofiring processes at temperatures usually lower than the regular sintering temperature for alumina. In order to answer the question of whether cofired alumina substrates can provide a reasonable high temperature electrical performance comparable to regular 96% alumina sintered at 17008C, this paper reports on the dielectric performance of a selected high temperature cofired ceramic (HTCC) alumina substrate and a low temperature cofired ceramic (LTCC) alumina (polycrystalline aluminum oxides with glass constituents) substrate from room temperature to 5508C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. Parallel-plate capacitive devices with dielectrics of these cofired alumina and precious metal electrodes were used for measurement of the dielectric properties of the cofired alumina materials in the temperature and frequency ranges. The capacitance and AC parallel conductance of these capacitive devices were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of selected LTCC and HTCC cofired alumina substrates are presented and compared with those of 96% alumina. Metallization schemes for cofired alumina for high temperature applications are discussed to address the packaging needs for low-power 5008C SiC electronics.

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Section: Methodsmentioning

confidence: 99%

Electrical Performance of Cofired Alumina Substrates at High Temperatures

Chen¹

2013

Journal of Microelectronics and Electronic Packaging

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“…There are different approximate analytical models that take the effect of fringing field into account (for example see [17][18][19][20][21][22][23]). Here, we use the FEM to precisely calculate the electrostatic force acting on a double-clamped beam.…”

Section: Calculation Of Electrostatic Forcementioning

confidence: 99%

A finite element technique for accurate determination of interfacial adhesion force in MEMS using electrostatic actuation

Shavezipur¹,

Li²,

Laboriante³

et al. 2011

J. Micromech. Microeng.

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This paper reports on accurate analysis of adhesion force between polysilicon–polysilicon surfaces in micro-/nanoelectromechanical systems (M/NEMS). The measurement is carried out using double-clamped beams. Electrostatic actuation and structural restoring force are exploited to respectively initiate and terminate the contact between the two surfaces under investigation. The adhesion force is obtained by balancing the electrostatic and mechanical forces acting on the beam just before the separation of the two surfaces. Different finite element models are developed to simulate the coupled-field multiphysics problem. The effects of fringing field in the electrostatic domain and geometric nonlinearity and residual stress in the structural domain are taken into consideration. Moreover, the beam stiffness is directly obtained for the case of combined loading (electrostatic and adhesion). Therefore, the overall electrostatic and structural forces used to extract the actual adhesion force from measured data are determined with high accuracy leading to accurate values for the adhesion force. The finite element simulations presented in this paper are not limited to adhesion force measurement and can be used to design or characterize electrostatically actuated devices such as MEM tunable capacitors and micromirrors, RF switches and M/NEM relays.

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“…In practice, the value of e med can be obtained simply by inserting the experimental values of C, measured by either a DMM or an LCR meter, into equation (3). Besides, it can also be acquired by using the value of e 0 together with experimentally measured values of C, A and d in equation (2).…”

Section: Introductionmentioning

confidence: 99%

“…Besides, it can also be acquired by using the value of e 0 together with experimentally measured values of C, A and d in equation (2). In PPC experiments, there are number of well understood and widely accepted issues: for example, the edge or fringing effect [2][3][4], tilt effect [5], body capacitance effect [5], dielectric thickness (D) effect [6][7][8], effect of geometry [9,10] and the effect of a trapped air layer [6,7], to name a few.…”

Section: Introductionmentioning

confidence: 99%

“…A survey of the literature suggests that there are numerous reports on laboratory-based PPC experiments for determining dielectric constants [2][3][4][5]8]. Many of them exploit the concept of validating the linear relationship between C and the inverse of the relative separation of the conducting plates, d −1 , which in turn is inversely related to the dielectric thickness D [5][6][7]11].…”

Section: Introductionmentioning

confidence: 99%

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An improved parallel-plate capacitor apparatus for the estimation of dielectric constants of solid materials

Riaz

Kanwal

2019

Eur. J. Phys.

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In this paper, we present the design and implementation of a modified parallel-plate capacitor (PPC) and its mathematical derivation, which may well be incorporated as a challenging problem in physics textbooks covering topics on capacitance and dielectrics. The dielectric material under test (MUT) fills the empty space between the plates of the PPC, and a very thin layer of air is trapped between the uneven surfaces of the metallic capacitor plates and the MUT. It has been reported in the literature (Grove T T et al 2005 Am. J. Phys. 73 52–56; Grove T T and Masters M F 2009 The Physics Teacher 47 312) that these air pockets lead to an error in the measured value of the dielectric constant of the MUT. The present work gives a prescription to estimate this value in a smart way so as to bypass the effect of a trapped thin air layer, and it leads to measured values of the dielectric constant similar to what has been reported in the literature (PLEXIGLAS®, Altuglas International and Arkema Inc., 2006 www.altuglasint.com). To the best of our knowledge, this paper is the first to present the design and implementation of a PPC cell of this kind to study dielectric constants. The topic can reasonably be taught in undergraduate laboratory physics coursework.

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Fringe capacitance of a parallel-plate capacitor

Cited by 7 publications

References 5 publications

Electrical Performance of Cofired Alumina Substrates at High Temperatures

Electrical Performance of Cofired Alumina Substrates at High Temperatures

A finite element technique for accurate determination of interfacial adhesion force in MEMS using electrostatic actuation

An improved parallel-plate capacitor apparatus for the estimation of dielectric constants of solid materials

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