Fringe structures and tunable bandgap width of 2D boron nitride nanosheets

Abstract

SummaryWe report studies of the surface fringe structures and tunable bandgap width of atomic-thin boron nitride nanosheets (BNNSs). BNNSs are synthesized by using digitally controlled pulse deposition techniques. The nanoscale morphologies of BNNSs are characterized by using scanning electron microscope (SEM), and transmission electron microscopy (TEM). In general, the BNNSs appear microscopically flat in the case of low temperature synthesis, whereas at high temperature conditions, it yields various curved structures. Experimental data reveal the evolutions of fringe structures. Functionalization of the BNNSs is completed with hydrogen plasma beam source in order to efficiently control bandgap width. The characterizations are based on Raman scattering spectroscopy, X-ray diffraction (XRD), and FTIR transmittance spectra. Red shifts of spectral lines are clearly visible after the functionalization, indicating the bandgap width of the BNNSs has been changed. However, simple treatments with hydrogen gas do not affect the bandgap width of the BNNSs.

High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

“…For example, hydrogen treatments can effectively manipulate the band gap width of the BNNSs. Obvious red shifts of Raman spectral lines, X-ray diffraction peaks, and Fourier Transform Infra-red (FTIR) transmittance spectra were observed, respectively [ 62 ].…”

Progress in pulsed laser deposited two-dimensional layered materials for device applications

“…Recently, ultrathin h-BN films were successfully produced by using a high repetition laser on Mo, aluminum nitride (AIN) and Si substrates. [120][121][122][123][124][125] A high purity pyrolytic h-BN crystal with a boron to nitride atom ratio of 1.05 was used as the target. The growth temperature showed a significant influence on the crystalline structure of BN films, in which the proportion of h-BN increases together with a decrease of the substrate temperature.…”

UV photodetector based on energy bandgap shifted hexagonal boron nitride nanosheets for high-temperature environments

“…High purity BNNSs usually have energy bandgap widths between 4.0 eV-5.5 eV, but major efforts have been successfully conducted towards developing BN energy bandgap width modulation techniques. As a result, BNNSs can now be synthesized with a wide range of energy bandgaps width even as low as 2 eV or less [30,31]. This makes BNNSs an ideal candidate for application as visible-blind UV photodetectors, capable of having high selectivity within the UV spectral range combined with the previously mentioned benefits of BN such as endurance and chemical inertness.…”