From 100 GHz to Terahertz Electronics - Activities in Europe

Schlechtweg, M.; Tessmann, A.

doi:10.1109/csics.2006.319905

Cited by 7 publications

(1 citation statement)

References 5 publications

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“…As a key part in high resolution imaging and remote sensing applications in the millimeter-and sub-mm frequency regimes, conventional down-conversion mixers are carried out on the basis of passive nonlinear components, such as Schottky diodes, hot-electron-bolometers (HEB) and superconductor-insulator-superconductor (SIS) diodes [28], [29]. In G-band, passive mixers have also been realized based on subharmonically pumped high electron mobility transistor (HEMT) diodes [30], [31] and as resistive field-effect transistor (FET) mixers [8], [32].…”

Section: E 210 Ghz Subharmonic Dual-gate Mixer Mmicmentioning

confidence: 99%

Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

Tessmann¹,

Kallfass²,

Leuther³

et al. 2008

IEEE J. Solid-State Circuits

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In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized using our 0.1 m InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 210 GHz low-noise amplifier MMIC was fabricated using our advanced 0.05 m mHEMT technology. To package the circuits, a set of waveguide-to-microstrip transitions has been realized on 50 m thick quartz substrates, covering the frequency range between 75 and 220 GHz. The presented millimeter-wave components were developed for use in a novel 210 GHz radar demonstrator COBRA-210, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm.Index Terms-Dual-gate FET, frequency multiplier, G-band, grounded coplanar waveguide (GCPW), high-power amplifier (HPA), inverse synthetic aperture radar (ISAR), low-noise amplifier (LNA), metamorphic high electron mobility transistor (mHEMT), millimeter-wave monolithic integrated circuit (MMIC), subharmonically pumped mixer, W-band.

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Section: E 210 Ghz Subharmonic Dual-gate Mixer Mmicmentioning

confidence: 99%

Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

Tessmann¹,

Kallfass²,

Leuther³

et al. 2008

IEEE J. Solid-State Circuits

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Modulation‐Doped Field‐Effect Transistors (MODFET)

Zhu

Ferreyra

Morkoç̌

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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Conventional modulation‐doped field‐effect transistors (MODFETs) with unprecedented performance, e.g., a power gain of 15 dB at 190–235 GHz and a noise level of 1.2 dB with 7.2‐dB gain in the 90‐GHz range, have been demonstrated. Passivation process is of fundamental importance in the stability, good performance, and extension of device operative lifetime. We discuss strategies used to passivate the surface of GaAs and related compounds and GaN in the context of FETs. Recent research on the enhancement‐mode PMODFET (E‐PMODFET) variety for applications in high‐speed and low‐power digital circuits, and power amplifiers with single power supply is described. Reliability of MOSFET based on GaAs is reviewed to some extent. Scalability issues as well as progress in FinFET‐based on InGaAs channel are summarized. Also to be noted is that III–V compound semiconductors as alternative to Si as the channel material to improve the performance of metal‐oxide–semiconductor field‐effect transistors (MOSFETs) on Si platforms is a very attractive option for the next‐generation high‐speed integrated circuits but faces serious challenges because of the lack of a high‐quality and natural insulator. III‐V Nitride‐based HFETs showed tremendous performance in both high‐power RF and power‐switching applications. AlGaN/GaN based high power HFETs on SiC substrate with 60 nm gate lengths have achieved maximum oscillation frequency of 300 GHz. On‐resistance of 1.1∼1.2 Ω·mm as well as drain current of ∼0.9 A/mm was also achieved. For HFET devices operated in Class AB mode on GaN semi‐insulating substrates, a continuous wave power density of 9.4 W/mm was obtained with an associated gain of 11.6 dB and a power added efficiency of 40% at 10 GHz. III‐Nitride devices for power switching application has achieved near theoretical limit for vertical devices based GaN native substrates, and breakdown voltage as high as 1200 V and on resistance as low as 9 mΩ‐cm2 for lateral HFET devices on low‐cost silicon substrates. For AlGaN/GaN HFETs on high‐resistivity silicon substrates, promising results were also demonstrated. Because of the much larger 2DEG density in lattice‐matched InAlN/GaN HFETs, drain current as high as 2 A/mm was demonstrated, and the highest current gain cutoff frequency of 370 GHz was also reported on 7.5‐nm‐thick In In0.17Al0.83N barrier HFETs. Despite the above‐mentioned encouraging achievements, the degradation mechanisms are still not clear, which requires further investigation. The advent of high‐quality SiGe layers on Si substrates has paved the way for the exploration and exploitation of heterostructure devices in a Si environment. MODFETs based on the Si/SiGe have been achieved with extraordinary p ‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz.

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MODULATION DOPED FETs

Ding,

Zhu,

Ferreyra

et al. 2024

Encyclopedia of RF and Microwave Engineering

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Conventional modulation‐doped field‐effect transistors (MODFETs) with unprecedented performance, for example, a power gain of 15 dB at 190–235 GHz and a noise level of 1.2 dB with 7.2‐dB gain in the 90‐GHz range, have been demonstrated. Passivation process is of fundamental importance in the stability, good performance, and extension of device operative lifetime. We discuss strategies used to passivate the surface of GaAs and related compounds and GaN in the context of FETs. Recent research on the enhancement‐mode PMODFET (E‐PMODFET) variety for applications in high‐speed and low‐power digital circuits and power amplifiers with single power supply is described. Reliability of MOSFET based on GaAs is reviewed to some extent. Scalability issues as well as progress in FinFET‐based on InGaAs channel are summarized. Also to be noted is that III–V compound semiconductors as an alternative to Si as the channel material to improve the performance of metal‐oxide–semiconductor field‐effect transistors (MOSFETs) on Si platforms are a very attractive option for the next‐generation high‐speed integrated circuits but face serious challenges because of the lack of a high‐quality and natural insulator.III‐Nitride‐based HFETs showed tremendous performance in both high‐power RF and power‐switching applications. AlGaN/GaN‐based high‐power HFETs on SiC substrate with 60‐nm gate lengths have achieved maximum oscillation frequency of 300 GHz. On‐resistance of 1.1–1.2 Ω mm as well as drain current of ∼0.9 A/mm was also achieved. For HFET devices operated in class AB mode on GaN semiinsulating substrates, a continuous‐wave power density of 9.4 W/mm was obtained with an associated gain of 11.6 dB and a power‐added efficiency of 40% at 10 GHz. III‐Nitride devices for power‐switching application have achieved near‐theoretical limit for vertical devices‐based GaN native substrates and breakdown voltage as high as 1200 V and on‐resistance as low as 9 mΩ‐cm2for lateral HFET devices on low‐cost silicon substrates. Because of the much larger 2DEG density in lattice‐matched InAlN/GaN HFETs, drain current as high as 2 A/mm was demonstrated, and the highest current gain cutoff frequency of 370 GHz was also reported on 7.5‐nm‐thick In0.17Al0.83N barrier HFETs. The very low on‐resistance allows high drain current, but it is subject to the junction temperature the devices can tolerate and is also restricted by the thermal expansion mismatch of the GaN‐on‐Si structures. Normally‐on and Normally‐off GaN HFETs with breakdown voltages in the range of 20–900 V are already commercially available. However, their competitivity against Si‐based IGBT and super junction MOSFETs and SiC‐FETs would depend on several factors such as voltage derating (used voltage versus the breakdown voltage), long‐term reliability, and cost.The advent of high‐quality SiGe layers on Si substrates has paved the way for the exploration and exploitation of heterostructure devices in an Si environment. MODFETs based on the Si/SiGe have been achieved with extraordinaryp‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz. MODFETs based on Ga2O3, especially β‐Ga2O3, have attracted a good deal of interests by the potential high breakdown voltage of Ga2O3but suffer from limitations imposed by both low electron mobility (affects efficiency and loss) and low thermal conductivity, hindering heat dissipation.

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From 100 GHz to Terahertz Electronics - Activities in Europe

Cited by 7 publications

References 5 publications

Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

Modulation‐Doped Field‐Effect Transistors (MODFET)

MODULATION DOPED FETs

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