2022
DOI: 10.1021/acsami.2c16338
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From Brittle to Ductile: A Scalable and Tailorable All-Inorganic Semiconductor Foil through a Rolling Process toward Flexible Thermoelectric Modules

Abstract: Inorganic thermoelectric (TE) materials with outstanding capacity for energy conversion are expected to be promising eco-friendly and renewable power sources, but they are always intrinsically brittle, restricting their development in flexible TE electronics. Therefore, we have developed a facile manufacturing method of large-scale all-inorganic silver chalcogenide foils and flexible TE generators in this work. A rolling process, as an effective and facile molding technique, is applied in ductile TE materials.… Show more

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Cited by 23 publications
(13 citation statements)
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“…[ 53 ] Besides, Se/Te co‐alloying can realize higher ZT values at room temperature. Ag 2 S 0.5 Se 0.45 Te 0.05 and Ag 2 S 0.45 Se 0.45 Te 0.1 alloys exhibited high ZT values of ≈0.44 and 0.47 at 300 K, [ 37,54 ] respectively. Such high room temperature thermoelectric performance originated from the ultra‐low κ l .…”
Section: Introductionmentioning
confidence: 99%
“…[ 53 ] Besides, Se/Te co‐alloying can realize higher ZT values at room temperature. Ag 2 S 0.5 Se 0.45 Te 0.05 and Ag 2 S 0.45 Se 0.45 Te 0.1 alloys exhibited high ZT values of ≈0.44 and 0.47 at 300 K, [ 37,54 ] respectively. Such high room temperature thermoelectric performance originated from the ultra‐low κ l .…”
Section: Introductionmentioning
confidence: 99%
“…5 To date, there are three main categories of approaches to address the flexibility of the TE materials. The first category of approaches is searching for flexible, high-performance inorganic materials, 6 such as Ag 2 S. 7 However, most of them are scarce. The second category of approaches is searching organics which have flexibility and high TE performance.…”
Section: Introductionmentioning
confidence: 99%
“…Subsequently, the flexibility of single-crystal ZnS in the complete darkness and single-crystal InSe is revealed. The relatively large bandgap (∼1 eV) of Ag 2 S gives electrical conductivity on the order of 10 –1 S m –1 , resulting in poor TE performance. , Alloying a certain amount of Se or Cu , to Ag 2 S is an effective way to improve its TE performance at ambient temperature, and the discovery of amorphous Ag 2 S 0.4 Te 0.6 provides another new idea for optimizing the deformability and TE performance of ductile inorganic semiconductor. …”
Section: Introductionmentioning
confidence: 99%