From crack deflection to lattice vibrations—macro to atomistic examination of dynamic cleavage fracture

Sherman, Dov; Be'ery, Ilan

doi:10.1016/j.jmps.2004.02.004

Cited by 51 publications

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References 36 publications

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“…The deflection was explained by minimum total energy considerations and was shown to depend upon crack velocity and crystallographic orientation (Sherman, 2005;Sherman and Be'ery, 2004). In the present paper, we report on phenomena associated with crack propagation occurring during dynamic propagation along the {1 1 1} low-energy cleavage plane of silicon.…”

mentioning

confidence: 82%

“…Note that the crack front, in its fully aligned situation (see below), experiences tensile mode only, due to the symmetric bending stresses, s zz , normal to the crack faces. At a steady-state of crack propagation, the crack front is approximated by a quarter ellipse with a long, shallow 'tail' Sherman and Be'ery, 2003) (Fig. 1b and c) and advancing at constant velocity, V x , to the x direction.…”

Section: Methodsmentioning

confidence: 99%

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Dynamic instabilities in {111} silicon

Sherman

Markovitz

Barkai

2008

Journal of the Mechanics and Physics of Solids

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mentioning

confidence: 82%

Section: Methodsmentioning

confidence: 99%

Dynamic instabilities in {111} silicon

Sherman

Markovitz

Barkai

2008

Journal of the Mechanics and Physics of Solids

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“…Finally, a dynamic analysis of the fracture process in mono silicon has to be done to investigate further the evolution of the crack path and its stability regarding thermomechanical loading conditions and mono silicon orientation [20][21][22][23].…”

Section: Resultsmentioning

confidence: 99%

Analysis of stress intensity factors and T-stress to control crack propagation for kerf-less spalling of single crystal silicon foils

Bouchard

Bernacki

Parks

2013

Computational Materials Science

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Monocrystalline silicon (called mono silicon) is extensively used in the electronic and solar photovoltaic industries. During the last decade, many new manufacturing processes have been developed to improve solar cells' efficiency while reducing their cost of production. This paper focuses on a kerf-less technique based on the controlled fracture of silicon foils by depositing an adherent stress-inducing layer on {hkl} cleavage plans. A finite element model (FEM) is defined to study the stress intensity factors (SIF) associated with a pre-crack located at a certain depth from the interface between the silicon substrate and the stress-inducing layer. A parametric study elucidates the dependence of the crack propagation direction on process variables including thickness of the stress-inducing layer, silicon substrate thickness, and precrack depth. The use of stress intensity factors and the T-stress characterize the crack propagation. These results are essential for efficient control of this kerf-less spalling process.

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“…The more complicated definition for is therefore i = i (θ, V ), where θ symbols the crystallographic orientation along certain cleavage plane, i, and V the temporal crack velocity. The crack is therefore propagating on the plane with the lowest dynamic cleavage energy (Sherman and Be'ery 2004b).…”

Section: The Crack Deflection Phenomenonmentioning

confidence: 99%

“…10), and thereafter will propagate on the (1 1 1) plane. The dependence of the dynamic cleavage energy on both the velocity and the orientation has lately been suggested (Sherman and Be'ery 2004b). as shown to assume the more general form of…”

Section: Energy Considerationsmentioning

confidence: 99%

Energy considerations in crack deflection phenomenon in single crystal silicon

Sherman

2006

Int J Fract

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Crack deflection in single-crystal brittle occurs when a crack, propagating on one cleavage plane, 'chooses', from energy considerations, to continue propagating on another cleavage plane. This phenomenon was identified during dynamic crack propagation experiments of thin, rectangular [0 0 1] single-crystal (SC) silicon specimens subjected to three-point bending (3PB). Specimens with long pre-cracks (hence propagating at a 'low' energy and velocity) cleave along the vertical (1 1 0) plane, while the same specimens but with short pre-cracks (and therefore with higher propagation energy and velocity) cleave along the inclined (1 1 1) plane. The same specimens with intermediate pre-crack length show that the crack first propagates on the (1 1 0) plane and then deflects to the (1 1 1) plane. We show that the deflection is due to variations of the material property that resists cracking, , the dynamic cleavage energy, with velocity and crystallographic orientation. We propose selection criteria to explain the deflection: The crack will deflect to the plane with the lowest dynamic cleavage energy. We further suggest that crack deflection is the basic mechanism controlling the way the crack consumes energy while propagating and is the main cause of surface perturbations.The spatial temporal fracture energy along the (1 1 0) cleavage plane is evaluated.

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From crack deflection to lattice vibrations—macro to atomistic examination of dynamic cleavage fracture

Cited by 51 publications

References 36 publications

Dynamic instabilities in {111} silicon

Dynamic instabilities in {111} silicon

Analysis of stress intensity factors and T-stress to control crack propagation for kerf-less spalling of single crystal silicon foils

Energy considerations in crack deflection phenomenon in single crystal silicon

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