From highly oriented bulk black arsenic phosphorus to well-crystallized exfoliated flakes with enhanced anti-oxidation: precise control upon chemical vapor transport

The susceptibility of bulk and exfoliated nanolayered arsenic to oxidation has been a significant obstacle limiting their widespread application and safe disposal. Here we report a controllable antimony-doped (Sb-doped) method via chemical vapor transport (CVT) with SnI 4 as a transport agent to prepare the bulk arsenic. After 96 h of exposure to air, the oxygen content on the surface of Sb-doped arsenic with SnI 4 is 67% lower compared to the undoped arsenic with SnI 4 , and 89% lower than the control group (undoped arsenic without SnI 4 ). Notably, Sbdoped arsenic is found to be easier and better exfoliated into twodimensional (2D) nanoflakes with an average diameter of approximately 180 nm and a thickness of 4−5 nm. Sb doping reduces the surface oxygen content of exfoliated arsenic nanoflakes by 48% after 48 h of oxidation. Comprehensive experimental investigations combined with first-principles calculations demonstrate that the antioxidation improvements resulting from Sb-doping are due to the decreased adsorption energies of I 2 on the (012) and (003) surfaces of Sb-doped arsenic, while the adsorption energies of O 2 increased compared to the corresponding surfaces of undoped arsenic. The enhanced long-term stability in both bulk and layered Sb-doped arsenic presents a promising avenue for further advanced applications.

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From highly oriented bulk black arsenic phosphorus to well-crystallized exfoliated flakes with enhanced anti-oxidation: precise control upon chemical vapor transport

Abstract: Black arsenic phosphorus (b-AsP), as a new V group 2D material, is a promising candidate for mid-wave infrared photodetectors. However, the lack of high quality b-AsP crystal synthesis strategy greatly...

Cited by 3 publications

References 45 publications

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