From MEMS devices to smart integrated systems

Soeraasen, O.; Ramstad, J. E.

doi:10.1007/s00542-007-0523-x

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…The array of MEMS beams together with the active channel of the transistors acts as vibration transducers, mimicking the behavior of the basilar membrane of the human ear. 6 The appropriate choice of sacrificial and structural materials is essential and relatively challenging for obtaining optimal compatibility in the integration of MEMS devices with MOSFET technology. 5 The development of a field-effect transistor (FET) having a suspended mechanical gate shares similar issues with the integration of MEMS structures onto CMOS devices.…”

Section: Introductionmentioning

confidence: 99%

Bimaterial electromechanical systems for a biomimetical acoustic sensor

Mastropaolo

Latif

Koickal

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Full-field optical measurement of curvatures in ultra-thin-film-substrate systems in the range of geometrically nonlinear deformations Bimaterial planarized micromechanical beams have been designed, simulated, and fabricated with lengths in the range 800-5800 lm and distance to substrate 0.8-4.0 lm. The beams are to be used as vertical-mode resonant gates on p-type field-effect transistors for implementing an adaptable MEMS acoustic sensor inspired by the human ear. A process for fabricating planar bilayer double-clamped beams made of silicon nitride (SiN) and aluminum (Al(1%Si)) has been developed. The planar design and bimaterial approach allow the fabrication of relatively straight beams with length up to 5800 lm with the possibility of controlling the degree of static deflection of the beams. The fabricated beams have shown a maximum deflection of $300 nm and a transverse concave shape with respect to the substrate due to the bilayer nature of the structure. From wafer curvature measurements, the stress in the SiN and Al(1%Si) is 200 and 280 MPa, respectively. Finite element simulations and analysis of the profile of the beams have demonstrated that the films' stress magnitude influences the longitudinal and transverse profile of the beams. The fabricated devices resonate mechanically in the range 15-160 kHz. Preliminary electrical characterization of the devices has shown drain currents in the lA range for gate voltages of À20 to À25 V and drain voltages of À5

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Section: Introductionmentioning

confidence: 99%

Bimaterial electromechanical systems for a biomimetical acoustic sensor

Mastropaolo

Latif

Koickal

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

“…The direct integration of MEMS with CMOS reduces parasitics, reduces the packaging complexity and the need for external components becomes less prominent. It turns out that integrating MEMS after the CMOS die has been produced has been most successful which is proven by Carnegie Mellon University (Chen et al, 2005;Fedder & Mukherjee, 2008), National Tsing Hua University (Dai et al, 2005), University of Florida (Qu & Xie, 2007) and University of Oslo (Soeraasen & Ramstad, 2008;Ramstad et al, 2009). The concept of CMOS-MEMS is maturing and seems to be versatile and offer the flexibility of possibly replacing RF-front end components or sensors, both relevant in the context of WSNN.…”

Section: Introductionmentioning

confidence: 99%