Front- and back-end process characterization by SIMS to achieve electrically matched devices

D‐SIMS analysis supporting SiOxNy film in‐line metrology

“…1). [3] Newer generation of magnetic sector SIMS instruments (SC Ultra and WF) eliminated such challenges by providing low primary ion energies thus making it possible to depth profile for nitrogen and oxygen using a wide variety of analytical secondary ions ( (Fig. 1).…”