“…Compared to CIGSe, the wide-gap semiconductor CIS shows a smaller efficiency and larger inhomogeneities in terms of integrated PL yield and optical band gap. In addition, lateral inhomogeneities of the stoichiometry, potential fluctuations, and band gap gradients in this ternary (CIS) or quaternary (CIGSe) semiconductor as well as the influence of grain boundaries are well reported [9,11,14,22,[25][26][27].…”