2014
DOI: 10.1002/pssa.201330351
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Front‐ and rear‐side photoluminescence: recombination, depth profiles of excess carriers and optical band gap of Cu(In,Ga)Se2 in a three‐layer system

Abstract: Spectral photoluminescence emitted from the front compared to the rear side of a semiconductor layer like a photovoltaic absorber is shown to exhibit significant differences in the highenergy regime. This arises from the excess-carrier depth profile and the absorption of photoluminescence photons during their way through the semiconductor layer depending on photon energy, distance to the absorber exit, and absorption coefficient.We get access to surface-recombination velocities, the minority-carrier diffusion … Show more

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Cited by 2 publications
(3 citation statements)
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“…Further information about the deposition, the structural, and opto‐electronic properties of these and similar samples can be found in Refs. (sample A) and Refs. (sample B), respectively.…”
Section: Methodsmentioning
confidence: 99%
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“…Further information about the deposition, the structural, and opto‐electronic properties of these and similar samples can be found in Refs. (sample A) and Refs. (sample B), respectively.…”
Section: Methodsmentioning
confidence: 99%
“…Compared to CIGSe, the wide-gap semiconductor CIS shows a smaller efficiency and larger inhomogeneities in terms of integrated PL yield and optical band gap. In addition, lateral inhomogeneities of the stoichiometry, potential fluctuations, and band gap gradients in this ternary (CIS) or quaternary (CIGSe) semiconductor as well as the influence of grain boundaries are well reported [9,11,14,22,[25][26][27].…”
Section: Experiments 31 Experimental Setupmentioning
confidence: 99%
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