Fulfilling the pedestrian protection directive using a long-wavelength infrared camera designed to meet both performance and cost targets

Källhammer, Jan-Erik; Pettersson, Håkan; Eriksson, Dick; Junique, Stéphane; Savage, Susan; Vieider, C.; Andersson, Jan Y.; Franks, John; Nylen, Jan Van; Vercammen, Hans; Kvisterøy, T.; Niklaus, Frank; Stemme, G.

doi:10.1117/12.663152

Cited by 13 publications

(12 citation statements)

References 12 publications

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“…However, due to its ability to see the radiation emitted by warm objects without external illumination, or to perform contactless temperature measurements, there is a plethora of applications that could benefit from low-cost infrared imaging solutions. Consumer market applications such as night vision enhancement systems for cars [1] are slowly becoming available, but the market penetration is still limited to high end models from premium brand manufacturers. For this particular application, only a significant reduction in price will enable fleet-wide uptake of infrared imaging systems.…”

Section: Introductionmentioning

confidence: 99%

Toward 17Âµm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays

Ericsson¹,

Fischer

Forsberg

et al. 2011

SPIE Proceedings

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Most of today's commercial solutions for un-cooled IR imaging sensors are based on resistive bolometers using either Vanadium oxide (VOx) or amorphous Silicon (a-Si) as the thermistor material. Despite the long history for both concepts, market penetration outside high-end applications is still limited. By allowing actors in adjacent fields, such as those from the MEMS industry, to enter the market, this situation could change. This requires, however, that technologies fitting their tools and processes are developed. Heterogeneous integration of Si/SiGe quantum well bolometers on standard CMOS read out circuits is one approach that could easily be adopted by the MEMS industry. Due to its mono crystalline nature, the Si/SiGe thermistor material has excellent noise properties that result in a state-ofthe-art signal-to-noise ratio. The material is also stable at temperatures well above 450°C which offers great flexibility for both sensor integration and novel vacuum packaging concepts. We have previously reported on heterogeneous integration of Si/SiGe quantum well bolometers with pitches of 40µm x 40µm and 25µm x 25µm. The technology scales well to smaller pixel pitches and in this paper, we will report on our work on developing heterogeneous integration for Si/SiGe QW bolometers with a pixel pitch of 17µm x 17µm.

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Section: Introductionmentioning

confidence: 99%

Toward 17Âµm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays

Ericsson¹,

Fischer

Forsberg

et al. 2011

SPIE Proceedings

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“…A process flow for fabrication of bolometers based on structures composed of sc-group IV materials through wafer bonding process on ROICs (Kvisterøy et al, 2007; J. Källhammer et al, 2006;F. Niklaus et al, 2001) is demonstrated in Fig.…”

Section: Wwwintechopencommentioning

confidence: 99%

“…All the membranes are in form of pixels which are bonded to a read-out circuit to amplify the generated signal (Kvisterøy et al, 2007; J. Källhammer et al, 2006;F. Niklaus, Kälvesten, & G. Stemme, 2001;F.…”

Section: Introductionmentioning

confidence: 99%

Group IV Materials for Low Cost and High Performance Bolometers

Radamson¹,

Kolahdouz²

2012

Bolometers

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“…Ulis). In both cases, the bolometer material is deposited and patterned on top of pre-fabricated CMOS-based ROIC wafers [2][3][4]. This integration approach is referred to as monolithic integration.…”

Section: Introductionmentioning

confidence: 99%

“…Imaging in the long wavelength infrared (LWIR) range from 8 to 14 µm is an excellent tool for non-contact measurement of temperature and for imaging of temperature patterns in applications such as thermography, surveillance and automotive night-vision [1][2][3][4]. IR imaging technology can be separated in two main realms; cooled detectors working with direct photon detection in the infrared wavelength, and uncooled thermal IR detectors that are based on heat absorption and the electrical measurement of the resulting temperature change of the detector membrane.…”

Section: Introductionmentioning

confidence: 99%

Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers

Malm¹,

Kolahdouz²,

Forsberg

et al. 2012

MRS Proc.

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Semiconductor-based thermistors are very attractive sensor materials for uncooled thermal infrared (IR) bolometers. Very large scale heterogeneous integration of MEMS is an emerging technology that allows the integration of epitaxially grown, high-performance IR bolometer thermistor materials with pre-processed CMOS-based integrated circuits for the sensor read-out. Thermistor materials based on alternating silicon (Si) and silicon-germanium (SiGe) epitaxial layers have been demonstrated and their performance is continuously increasing. Compared to a single layer of silicon or SiGe, the temperature coefficient of resistance (TCR) can be strongly enhanced to about 3 %/K, by using thin alternating layers. In this paper we report on the optimization of alternating Si/SiGe layers by advanced physically based simulations, including quantum mechanical corrections. Our simulation framework provides reliable predictions for a wide range of SiGe layer compositions, including concentration gradients. Finally, our SiGe thermistor layers have been evaluated in terms of low-frequency noise performance, in order to optimize the bolometer detectivity.

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Fulfilling the pedestrian protection directive using a long-wavelength infrared camera designed to meet both performance and cost targets

Cited by 13 publications

References 12 publications

Toward 17Âµm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays

Toward 17Âµm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays

Group IV Materials for Low Cost and High Performance Bolometers

Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers

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