Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films

Baldrati, Lorenzo; Ross, Andrew; Niizeki, Tomohiko; Schneider, Christoph; Ramos, R.; Cramer, Joel; Gomonay, Olena; Filianina, Mariia; Savchenko, Tatiana; Heinze, Daniel; Kleibert, Armin; Saitoh, Eiji; Sinova, Jairo; Kläui, Mathias

doi:10.1103/physrevb.98.024422

Cited by 129 publications

(126 citation statements)

References 45 publications

(96 reference statements)

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“…for Ip along E3, E2, and E1, respectively, as expected from the angular dependence of the damping-like SOT induced SH-AHE. 6,9,32 To corroborate the results in Fig. 2d, we use an independent approach to control the Néel order by an applied field (H) which aligns n  H via the in-plane spin-flop (SF) transition once H exceeds the SF field.…”

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confidence: 81%

“…2d, we use an independent approach to control the Néel order by an applied field (H) which aligns n  H via the in-plane spin-flop (SF) transition once H exceeds the SF field. Figure 2e shows an angular This indicates that the SF transition in our α-Fe2O3 films occurs at below 1 T with the total Néel order n  H. 32,33 The peak-to-valley magnitude of ΔRxy in Fig. 2e is 0.27 , which gives the upper limit of Hall resistance change in Pt/α-Fe2O3 switching measurement.…”

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confidence: 81%

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Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films

et al. 2020

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These two authors contributed equally to this work. The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn 2 Au. 1-5 Recently, current-induced "saw-tooth" shaped Hall resistance was reported in Pt/NiO bilayers, 6-9 while its mechanism is under debate. Here, we report the first demonstration of convincing, non-decaying, steplike electrical switching of tri-state Néel order in Pt/-Fe 2 O 3 bilayers. Our experimental data, together with Monte-Carlo simulations, reveal the clear mechanism of the switching behavior of -Fe 2 O 3 Néel order among three stable states. We also show that the observed "saw-tooth" Hall resistance is due to an artifact of Pt, not AF switching, while the signature of AF switching is step-like Hall signals. This demonstration of electrical control of magnetic moments in AF insulator (AFI) films will greatly expand the scope of AF spintronics by leveraging the large family of AFIs.Spin-orbit torque (SOT) induced switching of ferromagnets (FM) by an adjacent heavy metal (HM) has raised wide interests in recently years, 10-12 where a charge current in the HM generates spins at the HM/FM interface via the spin Hall effect (SHE). AFs offer the advantage of no stray field, robustness against external field, THz response, and abundance of material

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confidence: 81%

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confidence: 81%

Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films

et al. 2020

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“…The most extensively used FMI in insulating spintronics is yttrium iron garnet or YIG (Y 3 Fe 5 O 12 ), due to its low Gilbert damping, soft ferrimagnetism and negligible magnetic anisotropy 1,[4][5][6][7][10][11][12][13][14][15]17,18,[21][22][23][24][25][26][27][28][29][30] . Alternative magnetic insulators include antiferromagnets [31][32][33] , non-collinear magnets [34][35][36] , hexagonal ferrites 8 , ferrimagnetic spinels 19,[37][38][39] and other ferrimagnetic garnets 9,[40][41][42][43][44][45] .…”

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confidence: 99%

Synthetic Antiferromagnetic Coupling Between Ultrathin Insulating Garnets

et al. 2018

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The use of magnetic insulators is attracting a lot of interest due to a rich variety of spindependent phenomena with potential applications to spintronic devices. Here we report ultrathin yttrium iron garnet (YIG) / gadolinium iron garnet (GdIG) insulating bilayers on gadolinium iron garnet (GGG). From spin Hall magnetoresistance (SMR) and X-ray magnetic circular dichroism measurements, we show that the YIG and GdIG magnetically couple antiparallel even in moderate in-plane magnetic fields. The results demonstrate an allinsulating equivalent of a synthetic antiferromagnet in a garnet-based thin film heterostructure and could open new venues for insulators in magnetic devices. As an example, we demonstrate a memory element with orthogonal magnetization switching that can be read by SMR.

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“…Much of this research focuses on interactions involving magnons or spin waves at magnetic interfaces in hybrid structures. Examples of this are spin pumping [13][14][15][16][17][18][19], spin transfer [15,[20][21][22], and spin Hall magnetoresistance [23][24][25][26][27][28] at normal metal interfaces, and magnon-mediated superconductivity [9,10]. Recently, an experiment has also demonstrated spin transport in an antiferromagnetic insulator over distances up to 80 µm [29].…”

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confidence: 99%

Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators

et al. 2019

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Electrons and holes residing on the opposing sides of an insulating barrier and experiencing an attractive Coulomb interaction can spontaneously form a coherent state known as an indirect exciton condensate. We study a trilayer system where the barrier is an antiferromagnetic insulator. The electrons and holes here additionally interact via interfacial coupling to the antiferromagnetic magnons. We show that by employing magnetically uncompensated interfaces, we can design the magnon-mediated interaction to be attractive or repulsive by varying the thickness of the antiferromagnetic insulator by a single atomic layer. We derive an analytical expression for the critical temperature T c of the indirect exciton condensation. Within our model, anisotropy is found to be crucial for achieving a finite T c , which increases with the strength of the exchange interaction in the antiferromagnetic bulk. For realistic material parameters, we estimate T c to be around 7 K, the same order of magnitude as the current experimentally achievable exciton condensation where the attraction is solely due to the Coulomb interaction. The magnon-mediated interaction is expected to cooperate with the Coulomb interaction for condensation of indirect excitons, thereby providing a means to significantly increase the exciton condensation temperature range.Introduction.-Interactions between fermions result in exotic states of matter. Superconductivity is a prime example, where the negatively charged electrons can have an overall attractive coupling mediated by individual couplings to the vibrations, known as phonons, of the positively charged lattice. In addition to charge, the electron also has a spin degree of freedom. The electron spin can interact with localized magnetic moments through an exchange interaction exciting the magnetic moment by transfer of angular momentum. These excitations are quasiparticles known as magnons. Theoretical predictions of electron-magnon interactions have shown that these can also induce effects such as superconductivity [1][2][3][4][5][6][7][8][9][10].Research interest in antiferromagnetic materials is surging [11,12]. This enthusiasm is due to the promising properties of antiferromagnets such as high resonance frequencies in the THz regime and a vanishing net magnetic moment. Much of this research focuses on interactions involving magnons or spin waves at magnetic interfaces in hybrid structures. Examples of this are spin pumping [13-19], spin transfer [15, 20-22], and spin Hall magnetoresistance [23-28] at normal metal interfaces, and magnon-mediated superconductivity [9,10]. Recently, an experiment has also demonstrated spin transport in an antiferromagnetic insulator over distances up to 80 µm [29]. Moreover, antiferromagnetic materials are also of interest since it is believed that high-temperature superconductivity in cuprates is intricately linked to magnetic fluctuations near an antiferromagnetic Mott insulating phase [30,31]. Thus it is crucial to achieve a good understanding of antiferromagnetic magn...

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Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films

Cited by 129 publications

References 45 publications

Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films

Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films

Synthetic Antiferromagnetic Coupling Between Ultrathin Insulating Garnets

Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators

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