Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates

Tamargo, M. C.; Lin, W.; Guo, Shiping; Guo, Yongming; Luo, Yi; Chen, Y.C

doi:10.1016/s0022-0248(00)00274-8

Cited by 68 publications

(32 citation statements)

References 16 publications

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“…Up to now, some groups have reported the MgZnCdSe-based light emitters on InP [30,33,35,[46][47][48][49]. However, no lasing operation under the current injection scheme has been successful to date.…”

Section: Mgzncdse/beznte Ldsmentioning

confidence: 99%

Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

Kishino

Nomura

2004

phys. stat. sol. (c)

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PACS 78.20.Ci, 78.55.Et, 78.66.Hf, 81.05.Dz, 81.15.Hi, 85.60.Jb II-VI compound materials containing beryllium-chalcogenides such as BeZnTe, ZnCdSe/BeZnTe, and MgSe/BeZnTe superlattices grown on InP substrates have been investigated for yellow-green emitters employing molecular beam epitaxy. Photoluminescence peaks of ZnCdSe/BeZnTe superlattices were widely controlled from 740 to 507 nm by changing the layer thickness combination. Applying ZnCdSe/BeZnTe and MgSe/BeZnTe superlattices, visible light emitting diodes (LEDs) were fabricated emitting at the wavelengths from 554 (yellow-green) to 644 nm (red) at room temperature. For yellow (575nm) LEDs, a long lifetime more than 3500 hours was demonstrated. Laser diodes consisting of a ZnCdSe active, a MgSe/ZnCdSe superlattice n-cladding, and a MgSe/BeZnTe superlattice p-cladding layers successfully operated with yellow-green lasing emissions around 560 nm at 77 K.

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Section: Mgzncdse/beznte Ldsmentioning

confidence: 99%

Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

Kishino

Nomura

2004

phys. stat. sol. (c)

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“…White color light from TFEL display is produced by mixing light from differently doped II-VI films and color filters are used for obtaining a required red/green/blue (RGB) proportion resulting in white light emission. An alternative idea exploits mixing of blue-green emission from ZnCdSe/ZnSe quantum well and yellow emission from a ZnSe substrate [6,7]. Our idea goes in a similar direction, but has a simplicity advantage over the former one.…”

Section: Introductionmentioning

confidence: 99%

Tuning of Color Chromaticity of Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy

et al. 2006

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Monocrystalline films of sphalerite-type ZnSe were grown on GaAs(100) substrates from elemental Zn and Se precursors by atomic layer epitaxy in a gas flow system. Due to color mixing of band edge and deep defect-related emissions these layers emit intensive white light. Depth profiling cathodoluminescence indicates that green and red emissions mostly come from disordered regions of the films, close to the ZnSe/GaAs interface. We tested a possibility of tuning of chromaticity coordinates and of color temperature of the emission. We found that the chromaticity parameters (color perception) can be tuned by either regulating the appropriate accelerating voltage of electrons or current density of primary electrons in cathodoluminescence investigations. These properties of ZnSe films make them suitable for some practical applications as white light sources.

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“…In order to overcome these difficulties a broader range of materials have been employed. For example, full color LED emission has been demonstrated with ZnCdSe/ZnCdMgSe pseudomorphic QWs grown on InP [2]; CdZnSSe quaternary alloys have been used to produce laser emission in the 2.48 to 2.21 eV range (bluish green to greenish yellow) by varying the Cd content to values even higher than 40% [3]; red to green emission (1.94 to 2.41 eV), has been obtained with ZnSe/BeTe type-II LEDs through spatially indirect transitions [4]. LEDs with apparent white emission to the naked eye have been produced from homoepitaxial grown ZnSe pn heterostructures [5].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of ultra‐thin quantum wells of II–VI semiconductors for optoelectronic applications

Hernández‐Calderón

García‐Rocha

Dı́az-Arencibia

2004

Physica Status Solidi (b)

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Atomic layer epitaxy (ALE) was used to grow CdTe and CdSe quantum wells (QWs) with 1 to 4 monolayer thickness. With this ultra-thin quantum wells (UTQWs) it is possible to cover the red-blue spectral range. Low temperature photoluminescence spectroscopy reveals that most of these UTQWs present very intense and narrow emission and, depending on growth conditions, no thickness fluctuations are observed over the whole sample area. The heterostructures were grown at different temperatures between 260 and 290 °C. Both CdTe and CdSe UTQWs grown at the higher temperature presented blue-shifted emission compared to those grown at lower temperatures. This effect is attributed to Cd losses by reevaporation and Cd substitution by Zn. This effect of the temperature can be employed for fine tuning of the UTQW emission. The critical thickness of CdSe/ZnSe grown by ALE is estimated to be 5 ML. 1 Introduction After the first blue-green laser diode, produced in 1991 from wide-band-gap II-VI semiconductors [1], many efforts have been addressed to improve their lifetime and spectral range; it is desirable to produce full color emission devices based on II-VI semiconductors. Zn 1-x Cd x Se/ZnSe quantum wells (QWs) with x < 0.25 and thickness of a few nm have been employed as the active region of blue-green LEDs and lasers grown on GaAs substrates. To extend the emission range towards lower energies, ternary alloys with a higher Cd content are required. However, the increase of Cd in the QW increases the lattice mismatch with the ZnSe barrier, the consequence is that strain and alloy disorder produce the degradation of the optical and structural properties of the QWs. In order to overcome these difficulties a broader range of materials have been employed. For example, full color LED emission has been demonstrated with ZnCdSe/ZnCdMgSe pseudomorphic QWs grown on InP [2]; CdZnSSe quaternary alloys have been used to produce laser emission in the 2.48 to 2.21 eV range (bluish green to green-

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Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates

Cited by 68 publications

References 16 publications

Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

Tuning of Color Chromaticity of Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy

Growth and characterization of ultra‐thin quantum wells of II–VI semiconductors for optoelectronic applications

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