Full-field X-ray diffraction microscopy using polymeric compound refractive lenses

Abstract

Diffraction imaging is the science of imaging samples under diffraction conditions. Diffraction imaging techniques are well established in visible light and electron microscopy, and have also been widely employed in X‐ray science in the form of X‐ray topography. Over the past two decades, interest in X‐ray diffraction imaging has taken flight and resulted in a wide variety of methods. This article discusses a new full‐field imaging method, which uses polymer compound refractive lenses as a microscope objective to capture a diffracted X‐ray beam coming from a large illuminated area on a sample. This produces an image of the diffracting parts of the sample on a camera. It is shown that this technique has added value in the field, owing to its high imaging speed, while being competitive in resolution and level of detail of obtained information. Using a model sample, it is shown that lattice tilts and strain in single crystals can be resolved simultaneously down to 10−3° and Δa/a = 10−5, respectively, with submicrometre resolution over an area of 100 × 100 µm and a total image acquisition time of less than 60 s.

Impact of dual-layer solid-electrolyte interphase inhomogeneities on early-stage defect formation in Si electrodes

“…Early-stage defect formation visualized by FFDXM. FFDXM is a novel technique that combines the merits of hard X-ray diffraction (lattice deformation, penetration power) with microscopic imaging (spatial resolution, large field of view (FoV)) 19,20 . The working principle of FFDXM is illustrated in Fig.…”

X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si

“…For this purpose different techniques can be used, depending on the size of the objects to be investigated, the resolution needed or the available experimental time. One can use rocking curve imaging (RCI) (Mikulík et al, 2006;Domagala et al, 2007), scanning X-ray diffraction (SXRD) (Etzelstorfer et al, 2014;Zoellner et al, 2015;Tardif et al, 2016), full-field X-ray microscopy (FFXRM) or diffraction microscopy (Hilhorst et al, 2014;Li et al, 2015;Matsuyama et al, 2017). Using highly collimated beams, these techniques can be combined with the mapping of reciprocal space in three dimensions, applied typically to epitaxial layers as well as micro-and nanostructures (Diaz et al, 2010;Cornelius et al, 2012;.…”

A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon

“…The purpose of the present paper is to study the distribution of the misfit dislocations and their influence on the structural quality of a GaP/Si pseudo-substrate. Several methods have been employed for this purpose and reported in the literature, including plane-view and cross-section transmission electron microscopy (TEM/STEM) (Qian et al, 1995), electron-beaminduced current (Kittler & Seifert, 1994), etch-pit analysis (Yamaguchi et al, 1990), X-ray topography (Ohno et al, 2004), full-field X-ray diffraction microscopy (Hilhorst et al, 2014) and micro-/nano-beam X-ray diffraction (Heying et al, 1996;Schü lli & Leake, 2018). In this study, a scanning sub-micrometre X-ray diffraction method called quicK continuous Mapping (K-Map), developed by Chahine and co-workers at the ESRF (Chahine et al, 2014), is applied to characterize a thin GaP/Si sample.…”