2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) 2014
DOI: 10.1109/ipec.2014.6869989
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Full silicon carbide boost chopper module for high frequency and high temperature operation

Abstract: This paper presents a 1200-V 20-A full silicon carbide boost chopper module designed for high tempera ture and high frequency operation. The developed module is based on one silicon carbide metal oxide semiconductor field efl"ect transistor chip and two parallel connected silicon carbide schottky diode chips manufactured by Cree, Inc.The static and dynamic characteristics of the module have been experimentally determined and its performance tested in a 2-kW boost converter. The test results show that the devel… Show more

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“…The process of converter components design can be supported by simulations or analytic calculation only in a limited way [6,7]. It is because of simplified models of semiconductor components and magnetic materials.…”
Section: Introductionmentioning
confidence: 99%
“…The process of converter components design can be supported by simulations or analytic calculation only in a limited way [6,7]. It is because of simplified models of semiconductor components and magnetic materials.…”
Section: Introductionmentioning
confidence: 99%