1-MW solar power inverter with boost converter using all SiC power module

Fujii, Kansuke; Noto, Yasuyuki; Oshima, Masafumi; Okuma, Yasuhiro

doi:10.1109/epe.2015.7309080

Cited by 22 publications

(9 citation statements)

References 7 publications

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“…At present, SiC-based converters are used in solar inverters [83,84], EV/HEV drivers (e.g., SiC MOSFETs at Tesla Model 3 EVs) [85][86][87], railway traction inverters [88], high voltage applications [89], and uninterrupted power supplies (UPSs) [90]. The cost of a solar inverter was reduced by 20% of the power by using SiC diodes and SiC JFETs [91].…”

Section: Sic Applicationsmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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Section: Sic Applicationsmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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“…A 100 kW commercial-grade prototype design demonstrated 98% CEC weighted-average efficiency using SiC diodes. Future work is planned to improve the EU and CEC weighted efficiency to >98.5%, such as reported for high cost PV inverter prototypes that use SiC MOSFET and SiC diode power devices [20,21]. The planned efficiency improvements are achievable by pairing the SiC diodes with IGBTs that are optimised for highspeed switching.…”

Section: Discussionmentioning

confidence: 99%

High‐efficiency PV inverter with SiC technology

Wall¹,

Hong²,

Sha³

et al. 2017

IET Renewable Power Generation

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A high-efficiency, three-phase, solar photovoltaic (PV) inverter is presented that has low ground current and is suitable for direct connection to the low voltage (LV) grid. The proposed topology includes a three-phase, two-level (2L) voltage source inverter (VSI) and an active common-mode (CM) filter. The VSI utilises silicon (Si) insulated-gate bipolar transistors with silicon carbide (SiC) diodes to reduce switching losses and provide very high efficiency. The active CM filter reduces the high level of CM voltage associated with the three-phase 2L VSI. The active CM filter is controlled so that the PV ground current is reduced to acceptable levels, even when the PV inverter is connected directly to a LV grid with low-impedance grounding. 50 and 100 kW prototypes are presented that demonstrate high efficiency.

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“…SiC converters are being demonstrated or adopted in applications such as solar inverters [21,22], railway traction inverters [23], EV/HEV drives [24][25][26], uninterrupted power supplies (UPS) [27] and high voltage applications [28]. One of the most cited application examples is the adoption of SiC MOSFETs in Tesla Model 3 EVs [24], supplied by STMicroelectronics.…”

Section: Introductionmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

116

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Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.

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1-MW solar power inverter with boost converter using all SiC power module

Cited by 22 publications

References 7 publications

Review of Silicon Carbide Processing for Power MOSFET

Review of Silicon Carbide Processing for Power MOSFET

High‐efficiency PV inverter with SiC technology

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

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