Review of Silicon Carbide Processing for Power MOSFET

Langpoklakpam, Catherine; Liu, An-Chen; Chu, Kuo-Hsiung; Hsu, Lewis; Lee, Wen‐Chung; Chen, Shih-Chen; Sun, Chia‐Wei; Shih, Min‐Hsiung; Lee, Kung‐Yen; Kuo, Hao‐Chung

doi:10.3390/cryst12020245

Cited by 89 publications

(42 citation statements)

References 205 publications

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“…The smallest band gap is characteristic of films close in composition to SiC. The optical band gap of SiC is reported to lie in the range of 2.3 to 3.3 eV for the most common polytypes of SiC such as 6H-SiC, 4H-SIC, and 3C-SiC [ 61 ]. The experimental band gap of the stoichiometric Si 3 N 4 films is reported to be about 3.3 eV [ 62 ].…”

Section: Resultsmentioning

confidence: 99%

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

et al. 2023

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Silicon carbonitride films were deposited on Si (100), Ge (111), and fused silica substrates through the reactive magnetron sputtering of a SiC target in an argon-nitrogen mixture. The deposition was carried out at room temperature and 300 °C and at an RF target power of 50–150 W. An increase in the nitrogen flow rate leads to the formation of bonds between silicon and carbon atoms and nitrogen atoms and to the formation of SiCxNy layers. The as-deposited films were analyzed with respect to their element composition, state of chemical bonding, mechanical and optical properties, and wetting behavior. It was found that all synthesized films were amorphous and represented a mixture of SiCxNy with free carbon. The films’ surfaces were smooth and uniform, with a roughness of about 0.2 nm. Depending on the deposition conditions, SiCxNy films within the composition range 24.1 < Si < 44.0 at.%, 22.4 < C < 56.1 at.%, and 1.6 < N < 51.9 at.% were prepared. The contact angle values vary from 37° to 67°, the hardness values range from 16.2 to 34.4 GPa, and the optical band gap energy changes from 1.81 to 2.53 eV depending on the synthesis conditions of the SiCxNy layers. Particular attention was paid to the study of the stability of the elemental composition of the samples over time, which showed the invariance of the composition of the SiCxNy films for five months.

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Section: Resultsmentioning

confidence: 99%

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

et al. 2023

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“…Major concern for the future global technology is the limitation of the silicon (Si)-based electronics that is nearly reached. For instance, the efficiency of solar cells made from Si does not showing any progress since the last decade [1,2]. Similar thing happened in the utilization of Si for thermoelectric and fieldeffect transistor (FET) purposes [3].…”

Section: Introductionmentioning

confidence: 96%

First-principle calculation of silicon carbide (SiC) for the superhard material applications

Alfanny

Piliang

Ramadhan

2022

J. Phys.: Conf. Ser.

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Silicon carbide is considered to be one of the superhard material with the microhardness value more than 20 GPa. Here we report the theoretical study based on density functional theory methods on the SiC system. Three different semilocal functionals of LDA-PZ, GGA-PBE, and SCAN are utilized. The cubic crystal structure of SiC are used in all of our calculations that is fully-relaxed to obtain realistic description of both structural and electronical parameters. For the lattice parameter and insulating gap estimation, SCAN functional gives the best comparison with the experimental value with 4.34 Å and 1.67 eV respectively. The calculated Vickers hardness formula based on the SCAN functional gives the value of 36 GPa

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“…Power density can be improved by increasing the switching frequency of the converter [3]. Silicon carbide (SiC) is a semiconductor material suitable for efficient power conversion with higher operating frequency than conventional materials like silicon (Si) [4]- [6].…”

Section: Introductionmentioning

confidence: 99%

Core losses analysis of the LCL filter inductor for SiC-based inverter

Martín-Arroyo¹,

Cañete²,

Ciudad³

et al. 2024

RE&PQJ

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The ability of SiC devices to switch at high speed allows increasing significantly the power density in both converters and passive components, reducing their required size. To mitigate harmonic injection form inverters into the grid, in order to comply with power quality standards, an accurate filter design is required. Given its excellent performance, an LCL filter is the configuration most suitable in grid-connected power converters. Several parameters must be considered when designing an effective LCL filter, and the inverter-side inductor assumes a special importance because of its relevance to suppress high frequency harmonic content at the inverter side. One of the most relevant issues to be considered in the process of designing the LCL filter is the evaluation of core losses in the inverter-side inductor, which will determine the final temperature of the inductor. This paper analyses the core losses of the inverter-side inductor of an LCL filter. The proposed method is based on the computation of the current harmonics generated by the inverter and on Steinmetz’s empirical equation. As a result, core losses calculated taking into account several carrier and sideband harmonics show good agreement with the experimental values. When current harmonics are estimated by simulation, as it is done in the proposed design procedure, results are less accurate, but precise enough for a design procedure.

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Review of Silicon Carbide Processing for Power MOSFET

Cited by 89 publications

References 205 publications

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering

First-principle calculation of silicon carbide (SiC) for the superhard material applications

Core losses analysis of the LCL filter inductor for SiC-based inverter

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