Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

High-performance 0.1-µm InAlN/GaN high electron-mobility transistors (HEMTs) have been successfully developed for power amplifiers operating at E-band (targeting 71-76 and 81-86-GHz bands). High maximum drain current of 1.75 A/mm and maximum extrinsic transconductance of 0.8 S/mm have been achieved for depletion-mode devices. Enhancement-mode HEMTs have also shown maximum drain current of 1.5 A/mm and maximum extrinsic transconductance of 1 S/mm. The selection of atomic layer deposition aluminum oxide (Al 2 O 3 ) for device passivation enables a two-terminal breakdown voltage of ∼25 V, excellent subthreshold characteristics as well as the pulsed-IV featuring little current collapse for both types of HEMTs. When biased at a drain voltage of 10 V, a first-pass two-stage power amplifier design based on 0.1-µm depletion-mode devices has demonstrated an output power of 1.43 W with 12.7% power-added efficiency at 86 GHz, a level of performance that has been attained previously only by state-of-the-art counterparts based on AlGaN/GaN HEMTs at a much higher drain bias and compression level.

In this study, we investigated the characteristic difference between the two different configurations of the three-dimensional shell–core nanorod LED. We achieve a degree of polarization of 0.545 for tip-free core–shell nanorod LED and 0.188 for tip core–shell nanorod LED by combining the three-dimensional (3D) structure LED with photonic crystal. The ability of low symmetric modes generated by photonic crystals to enhance degree of polarization has been demonstrated through simulations of photonic crystals. In addition, light confinement in GaN-based nanorod structures is induced by total internal reflection at the GaN/air interface. The combination of 3D core–shell nanorod LED and photonic crystals cannot only produce a light source with a high degree of polarization, but also a narrow divergence angle up to 56°. These 3D LEDs may pave the way for future novel optoelectronic components.