Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices

Abstract

An outstanding issue with organic devices is the difficulty of simultaneously controlling the lateral size and position of structures at submicron or nanometer scales. In this study, nanocomposite electron beam (EB) organic resists are proved to be excellent candidates for electrically conductive and/or memory component materials for submicron or nanometer lateral-scale organic electronic devices. The memory and the resist patterning characteristics are investigated for a positive electron beam resist of ZEP520a containing [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). Regarding the memory characteristics, good programming and excellent retention characteristics are obtained for electrons. The carrier transfer and retention mechanisms are also investigated. Regarding the resist patterning characteristics, it is found that line patterns (square patterns) of ZEP520a containing PCBM can be made with widths (side lengths) of less than 200 nm by using an extremely simple process with only EB exposures and developments. The distribution of PCBM molecules or their aggregations is also clarified in ZEP520a containing PCBM. The results of this study open the door to the simple fabrication of highly integrated flexible memories and electrical wires as well as of single-electron or quantum devices, including quantum information devices and sensitive biosensors for multiplexed and simultaneous diagnoses.

An electrospun polymer composite with fullerene-multiwalled carbon nanotube exohedral complexes can act as memory device

“…Regarding memory devices, fullerene C60 and some of its derivatives such as [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) have been employed alone and in the form of thin-film polymer composites for the fabrication of non-volatile memories. This nanomaterial has been used in different memory architectures such as metal oxide-semiconductor capacitors [31,32], charge trapping memory transistors [33,34] and memristors [35][36][37][38][39][40][41][42][43][44][45][46]. Memristors are particularly attractive because they mimic brain synapses.…”

Conformational Analysis of the Supramolecular Complexation of Diaryl-Substituted Tetrathiafulvalene Vinylogues with Fullerenes

“…Since the discovery of buckminsterfullerene C 60 by Kroto, Curl, and Smalley in 1985, fullerenes and fullerene-containing materials have stimulated tremendous scientific interest. − The most stable and abundant fullerenes prepared by usual methods such as the Kratschmer–Huffman arc discharge technique are C 60 and C 70 fullerenes. , Higher fullerenes are also accessible, including C 74 , C 76 , C 78 , C 80 , C 82 , and C 84 , but their preparation and isolation are more challenging . The design and synthesis of selective molecules that have the ability to detect and separate fullerenes have been receiving great attention in the field of supramolecular chemistry. − Efficient separation and purification of different types of fullerenes can be achieved by the host–guest complexation of fullerenes (guests) with proper receptor molecules (hosts) .…”

Short Review on Fullerene-Containing Electrically Conducting Electron Beam Resist for Organic Biosensors with Nanostructures

“…Recently, organic EB resist polymers containing fullerenes have been developed as submicron-or nanometer-sized electrically conductive organic materials that allow simultaneous control of the lateral size and position [26]. In these materials, a positive-type EB resist of ZEP520a is used as the matrix organic polymer and fullerenes are incorporated in it (Figure 1).…”

“…In the above recent report on ZEP520a containing PCBM molecules [26], memory characteristics as well as resist patterning characteristics of the nanocomposite organic EB resist polymer were examined. Figure 2a is a schematic diagram of a capacitor structure fabricated for the capacitance-voltage (C-V) measurements.…”