Fully-Depleted 0.25 Micron Silicon-on-Insulator MOSFET Transistors for Microwave Applications

Abstract

Thin film fully-depleted Silicon-on-Insulator (SOI) CMOS technology can achieve a maximum oscillation frequency fmax of 50 GHz for lV supply voltage, when TiS½ is used on the gate. This kind of performances and the advantages of the SOI transistors fit the needs for low-voltage low-power microwave applications. The accurate extraction of the small signal equivalent circuit of those transistors is necessary for their optimisation and the design of future microwave circuits.

Microwave Integrated CMOS Oscillators on Silicon-on-Insulator Substrate

“…Thin film FD SOI CMOS technology is a very attractive candidate for low-power, low-cost microwave circuits, because of its excellent performances in terms of gain, speed and cut-off frequency [1]. Current gain cut-off frequency (f T ) and a maximum oscillation frequency (f max ) of 25 GHz and 70 GHz, respectively, have been measured at 1 V for 0.25 µm salicided FD SOI nMOSFET's LETI technology.…”