Fully Inkjet-Printed, Mechanically Flexible MoS₂ Nanosheet Photodetectors

Abstract

Solution-processed two-dimensional materials offer a scalable route toward next-generation printed devices. In this report, we demonstrate fully inkjet-printed photodetectors using molybdenum disulfide (MoS2) nanosheets as the active material and graphene as the electrodes. Percolating films of semiconducting MoS2 with high electrical conductivity are achieved with an ethyl cellulose-based ink formulation. Two classes of photodetectors are fabricated, including thermally annealed devices on glass with fast photoresponse of 150 μs and photonically annealed devices on flexible polyimide with high photoresponsivity exceeding 50 mA/W. The photonically annealed photodetector also reduces the curing time to milliseconds and maintains functionality over 500 bending cycles.

An Atomically Thin Optoelectronic Machine Vision Processor

“…[1][2][3] Having direct bandgaps, these atomically thin materials are suitable for electronic and optoelectronic works, with their stacks into various heterostructures promising a wealth of engineered electronic and optoelectronic properties. [3][4][5][6][7][8] While single transistors and photodetectors built from 2D materials have already garnered significant research interest, [9][10][11][12] recent advances in large-area synthesis of TMD monolayers have opened up an exciting possibility to integrate a large number power budget of the otherwise enormously successful digital neural net paradigm. At the same time, various material systems, including organics and perovskites, have been employed to develop front-end in-memory image sensors, [30][31][32][33][34] so far integrating up to 100 pixels.…”

Inkjet‐Printed Indium Oxide/Carbon Nanotube Heterojunctions for Gate‐Tunable Diodes

“…To the best of our knowledge, none of the p-n heterojunction-based NDR or NTC devices have been realized by inkjet printing, which is considered to be a scalable and low-cost method for device fabrication. Inkjet printing has already demonstrated great potential in various electronic devices [23][24][25][26][27][28][29][30] that we expand further with this work. To form p-n heterojunctions by inkjet printing, proper nand p-type semiconductors, which are inkjet printable and compatible to each other, should be employed.…”

Memristive Non-Volatile Memory Based on Graphene Materials

“…As one of most representative and competitive graphene-based materials, GO received considerable attention in the industry of large-area flexible electronic devices due to its promising potential for next-generation information storage [156][157][158][159][160][161][162][163]. GO can be dispersed in a variety of solvents, which permits compatible processes with a wide range of commercially available flexible substrates.…”

“…GO can be dispersed in a variety of solvents, which permits compatible processes with a wide range of commercially available flexible substrates. With various technologies like spin coating [164][165][166], drop casting [167][168][169], dip coating [170][171][172], and inkjet printing [157,173,174], GO dielectric layers can be deposited onto flexible substrates like polyethylene terephthalate (PET), polyether sulfone (PES), and polyimide [175][176][177][178][179][180]. In addition, the thickness of a single atomic layer and the excellent dispersibility in various solvents result in GO having enhanced compatibility with different commercial substrates [181][182][183].…”