Fully integrated electrically driven optical frequency comb at communication wavelength

Li, Nanxi; Chen, Guanyu; Lim, Leh Woon; Ho, Chong Pei; Xue, Jin; Fu, Yuan Hsing; Lee, Lennon Y. T.

doi:10.1515/nanoph-2022-0146

Cited by 8 publications

(8 citation statements)

References 119 publications

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“…OFC has been applied in precision measurement, [246] microwave photonics, [247][248][249] and optical frequency synthesis. [250][251][252] The multispectral property of chip-scale OFC enables its application in communication systems and optical interconnect in data centers, [253][254][255] as a compact alternative for multiwavelength laser or laser diode array. The transmission of a data stream of >50 terabit s −1 on 179 optical carriers has been reported, [253] while the pump source is still off chip.…”

Section: Discussionmentioning

confidence: 99%

“…[254] A lot of developments can be done to implement a compact integrated soliton frequency comb for communications. [255] Second, for RE-doped lasers, although having advantages of low noise, high thermal stability, and large-scale integration on CMOS line, their limitation is on optical pumping scheme. The electrically pumped RE-doped LED has been demonstrated by using different host materials such as SRO and SRN, [240,241] while the realization of electrically pumped RE-doped laser still requires significant development effort.…”

Section: Discussionmentioning

confidence: 99%

“…[ 254 ] A lot of developments can be done to implement a compact integrated soliton frequency comb for communications. [ 255 ]…”

Section: Discussionmentioning

confidence: 99%

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Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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including high refractive index contrast with its oxide material, low loss at communication wavelength regime, and significant thermo-optic coefficient for tuning. Contributed by these advantages, various photonic components have been demonstrated on integrated Si photonics platform, including mode couplers, [3][4][5][6] tunable filters, [7][8][9][10] and optical modulators. [11][12][13][14] However, Si itself is an indirect bandgap material, which limits its light emission efficiency. Laser sources on Si remain to be the challenging component for photonics integration. The requirements of an integrated laser source not only cover laser performance parameters such as optical power, threshold, pumping scheme, and stability, but also low-cost and high-volume production. Researchers are trying to come up with different ways to integrate lasers on Si. The most common way is to integrate III-V lasers on Si photonics platform, through bonding integration or direct growth approach. Alternatively, group IV materials such as germanium (Ge) and germanium tin (GeSn) alloy-based lasers show promise, with significant research progress in the past decade. Raman effect has also been explored to demonstrate lasers on Si. Such kind of laser enables lasing from the Si material itself and has drawn a lot of interest in the research community. Also, rare earth (RE) elements can be doped within photonics layer to make lasers on Si, which is similar to the idea of RE-doped optical fiber laser. RE-doped laser has the advantage of low noise and high thermal stability. Comprehensive reviews on Si-integrated lasers were published more than 6 years ago. [15,16] In the meanwhile, to the best of our knowledge, the review for the most recent progress on Siintegrated lasers covering the above-mentioned approaches is still lacking.In this review, we have summarized the recent development progress of lasers integrated on Si in the past two decades, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III-V semiconductor laser, Ge/GeSn laser, Si-based Raman laser, and RE-doped laser on Si. For III-V laser, different integration approaches are discussed, covering flip-chip integration, transfer printing integration, hybrid bonding, and direct growth method. The review is organized in the following way: it starts from background information as presented in Section 1. III-V laser, Ge/GeSn laser, Raman laser, and RE-doped laser

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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“…[66,[96][97][98][99] Contributed by the nonlinear optical properties of the materials on integrated photonics platform, chip-scale OFCs have been demonstrated and investigated. [100][101][102] Recently, integrated OFCs have also been used as light source for LiDAR sensing. [1,2,30,103] In this section, recent research progress of Li-DAR sensors using integrated OFCs is reviewed.…”

Section: Frequency Comb Sources For High-performance Lidarmentioning

confidence: 99%

A Progress Review on Solid‐State LiDAR and Nanophotonics‐Based LiDAR Sensors

Xue

et al. 2022

Laser & Photonics Reviews

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113

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Light detection and ranging (LiDAR) sensors enable precision sensing of an object in 3D. LiDAR technology is widely used in metrology, environment monitoring, archaeology, and robotics. It also shows high potential to be applied in autonomous driving. In traditional LiDAR sensors, mechanical rotator is used for optical beam scanning, which brings about limitations on their reliability, size, and cost. These limitations can be overcome by a more compact solid‐state solution. Solid‐state LiDAR sensors are commonly categorized into the following three types: flash‐based LiDAR, microelectromechanical system (MEMS)‐based LiDAR, and optical phased array (OPA)‐based LiDAR. Furthermore, advanced optics technology enables novel nanophotonics‐based devices with high potential and superior advantages to be utilized in a LiDAR sensor. In this review, LiDAR sensor principles are introduced, including three commonly used sensing schemes: pulsed time of flight (TOF), amplitude‐modulated continuous wave TOF, and frequency‐modulated continuous wave. Recent advances in conventional solid‐state LiDAR sensors are summarized and presented, including flash‐based LiDAR, MEMS‐based LiDAR, and OPA‐based LiDAR. The recent progress on emerging nanophotonics‐based LiDAR sensors is also covered. A summary is made and the future outlook on advanced LiDAR sensors is provided.

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“…Nowadays, OFCs have been recognized as potential multi-wavelength sources used in optical communication field, which can provide up to thousands of optical channels from single comb laser applied in dense wavelength-division multiplexing (DWDM) systems [20,[28][29][30]. However, the traditional OFC-based technologies mainly rely on the bulky, power-hungry, complex, and expensive equipment to generate the comb lines, which will seriously restrict the application of them.…”

Section: Introductionmentioning

confidence: 99%

Advances of semiconductor mode-locked laser for optical frequency comb generation

Wei¹,

Chen²,

Huang³

et al. 2022

NSO

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Semiconductor mode-locked lasers (MLLs) can provide coherent optical frequency combs (OFCs) with high repetition rates and output power, which have been recognized as potential multi-wavelength sources used in optical communication field due to their compactness, high-efficiency, and low-cost properties. In this article, we have reviewed recent development of semiconductor MLL-based frequency comb generation. Different approaches of semiconductor MLLs for OFC generation are synoptically summarized based on various material platforms. The representative progress of III-V semiconductor MLLs on III-V platform and especially on Si substrates is both discussed for the applications in integrated silicon photonics.

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Fully integrated electrically driven optical frequency comb at communication wavelength

Cited by 8 publications

References 119 publications

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

A Progress Review on Solid‐State LiDAR and Nanophotonics‐Based LiDAR Sensors

Advances of semiconductor mode-locked laser for optical frequency comb generation

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