Fully Integrated Galvanically Isolated DC-DC Converters Based on Inductive Coupling

Ragonese, Egidio; Parisi, Alessandro; Spina, Nunzio; Palmisano, G.

doi:10.1007/978-3-030-11973-7_39

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…Recent advancements in wide-bandgap (WBG) semiconductor material-based devices, including gallium nitride (GaN) high electronmobility transistors and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) which show superior electric and thermal characteristics [5], have largely helped eliminate the bottleneck of power modules by dramatically maximizing the converter efficiency and power density at the higher switching frequencies and operating voltages [6]. However, in WBG switching device-based power converter applications, electric components in the low-voltage domain are susceptible to voltage surges, ground drift, and leakage current introduced from power MOSFETs in the high-voltage domain, which can potentially cause a breakdown of integrated control circuits [7,8]. Therefore, as the interface between the low-voltage controller and the high-voltage power stage, the integrated micro-transformers that power the gate drivers through embedded galvanic isolation barriers [9] to control the energy flow in WBG switching devices are required to protect against large potential differences, which can be as high as 800 V [10].…”

Section: Introductionmentioning

confidence: 99%

A High-Voltage-Isolated MEMS Quad–Solenoid Transformer with Specific Insulation Barriers for Miniaturized Galvanically Isolated Power Applications

Chen,

Pan,

et al. 2024

Micromachines

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The paper reports on high voltage (HV)-isolated MEMS quad–solenoid transformers for compact isolated gate drivers and bias power supplies. The component is wafer-level fabricated via a novel MEMS micro-casting technique, where the tightly coupled quad–solenoid chip consists of monolithically integrated 3D inductive coils and an inserted ferrite magnetic core for high-efficiency isolated power transmission through electromagnetic coupling. The proposed HV-isolated transformer demonstrates a high inductance value of 743.2 nH, along with a small DC resistance of only 0.39 Ω in a compact footprint of 6 mm2, making it achieve a very high inductance integration density (123.9 nH/mm2) and the ratio of L/R (1906 nH/Ω). More importantly, with embedded ultra-thick serpentine-shaped (S-shaped) SiO2 isolation barriers that completely separate the primary and secondary windings, an over 2 kV breakdown voltage is obtained. In addition, the HV-isolated transformer chips exhibit a superior power transfer efficiency of over 80% and ultra-high dual-phase saturation current of 1.4 A, thereby covering most practical cases in isolated, integrated bias power supplies such as high-efficiency high-voltage-isolated gate driver solutions.

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Section: Introductionmentioning

confidence: 99%

A High-Voltage-Isolated MEMS Quad–Solenoid Transformer with Specific Insulation Barriers for Miniaturized Galvanically Isolated Power Applications

Chen,

Pan,

et al. 2024

Micromachines

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“…Safety rules for equipment operated by human beings, along with severe reliability requirements for electronics in harsh environments, call for galvanic isolation in several application fields, even at very low power levels, as summarized in Figure 1a [1]. A typical galvanically isolated system is shown in Figure 1b [1]. It consists of two isolated domains (i.e., with different isolated ground references) that exchange data signals across the galvanic barrier.…”

Section: Introductionmentioning

confidence: 99%

An Experimental Comparison of Galvanically Isolated DC-DC Converters: Isolation Technology and Integration Approach

et al. 2021

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This paper reviews state‑of-the‑art approaches for galvanically isolated dc-dc converters based on radio frequency (RF) micro-transformer coupling. Isolation technology, integration level and fabrication issues are analyzed to highlight the pros and cons of fully integrated (i.e., two chips) and multichip systems-in-package (SiP) implementations. Specifically, two different basic isolation technologies are compared, which exploit thick‑oxide integrated and polyimide standalone transformers, respectively. To this aim, previously available results achieved on a fully integrated isolation technology (i.e., thick‑oxide integrated transformer) are compared with the experimental performance of a dc-dc converter for 20-V gate driver applications, specifically designed and implemented by exploiting a stand-alone polyimide transformer. The comparison highlights that similar performance in terms of power efficiency can be achieved at lower output power levels (i.e., about 200 mW), while the fully integrated approach is more effective at higher power levels with a better power density. On the other hand, the stand-alone polyimide transformer approach allows higher technology flexibility for the active circuitry while being less expensive and suitable for reinforced isolation.

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“…A galvanically isolated system consists of two isolated domains that exchange data signals across the galvanic barrier (see Figure 1). Full isolation is provided if the power supply of domain 2, V DD2 , is provided from the power supply of domain 1, V DD1 , by means of a galvanically isolated DC-DC converter [1]. Nowadays, galvanic isolation is highly required in low-power applications (i.e., lower than 100 mW), such as factory automation, process control, building automation, portable instrumentation, etc.…”

Section: Introductionmentioning

confidence: 99%

Compact Galvanically Isolated Architectures for Low-Power DC-DC Converters with Data Transmission

et al. 2021

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This paper reviews state-of-the-art architectures for galvanically isolated DC–DC converters with data transmission for low-power applications. Such applications do not have stringent requirements, in terms of power efficiency, but ask for very compact, highly integrated implementations. To this aim, architecture simplicity is crucial, especially when data transmission and/or output power regulation are required. Since the bottleneck of galvanically isolated systems is the isolation device (i.e., typically a stacked thick oxide or polyimide transformer), the reduction of the number of isolated links, while preserving both power and data functionalities, is the more effective strategy to increase the level of integration, reduce the form factor, and have a lower cost per channel. Specifically, this review compares the pros and cons of different architectures that address this challenge differently from traditional solutions.

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Fully Integrated Galvanically Isolated DC-DC Converters Based on Inductive Coupling

Cited by 3 publications

References 8 publications

A High-Voltage-Isolated MEMS Quad–Solenoid Transformer with Specific Insulation Barriers for Miniaturized Galvanically Isolated Power Applications

A High-Voltage-Isolated MEMS Quad–Solenoid Transformer with Specific Insulation Barriers for Miniaturized Galvanically Isolated Power Applications

An Experimental Comparison of Galvanically Isolated DC-DC Converters: Isolation Technology and Integration Approach

Compact Galvanically Isolated Architectures for Low-Power DC-DC Converters with Data Transmission

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