Fully Integrated Linear Single Photon Avalanche Diode (SPAD) Array with Parallel Readout Circuit in a Standard 180 nm CMOS Process

Abstract

This paper reports on the development of a SPAD device and its subsequent use in an actively quenched single photon counting imaging system, and was fabricated in a UMC 0.18μm CMOS process. A low-doped p-guard ring (t-well layer) encircling the active area to prevent the premature reverse breakdown. The array is a 16x1 parallel output SPAD array, which comprises of an active quenched SPAD circuit in each pixel with the current value being set by an external resistor R Ref =300 kΩ. The SPAD I-V response, I D was found to slowly increase until V BD was reached at excess bias voltage, V e = 11.03 V, and then rapidly increase due to avalanche multiplication. Digital circuitry to control the SPAD array and perform the necessary data processing was designed in VHDL and implemented on a FPGA chip. At room temperature, the dark count was found to be approximately 13 KHz for most of the 16 SPAD pixels and the dead time was estimated to be 40 ns.