Fully integrated SONOS flash memory cell array with BT (body tied)-FinFET structure

In this paper, we report a metal/Al 2 O 3 /ZrO 2 /SiO 2 /Si (MAZOS) structure with a ZrO 2 charge-trapping layer for non-volatile memory application. The superiority of this device over the traditional metal/Al 2 O 3 /Si 3 N 4 /SiO 2 /Si (MANOS) devices is much better data retention and enhanced program/erase efficiency. The MAZOS device exhibits excellent memory characteristics, including a large memory window of 7.1 V under ±11 V capacitance-voltage sweep, and a greatly improved data retention (only 16% charge loss for 10 years time) along with good endurance. The MAZOS device has a strong potential for future high-performance non-volatile memory application.

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Fully integrated SONOS flash memory cell array with BT (body tied)-FinFET structure

Cited by 25 publications

References 4 publications

Physical noise model of a uniformly doped nanoscale FinFET photodetector

Physical noise model of a uniformly doped nanoscale FinFET photodetector

Modeling of program, erase and retention characteristics of charge-trap gate all around memories

A metal/Al₂O₃/ZrO₂/SiO₂/Si (MAZOS) structure for high-performance non-volatile memory application

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Fully integrated SONOS flash memory cell array with BT (body tied)-FinFET structure

Cited by 25 publications

References 4 publications

Physical noise model of a uniformly doped nanoscale FinFET photodetector

Physical noise model of a uniformly doped nanoscale FinFET photodetector

Modeling of program, erase and retention characteristics of charge-trap gate all around memories

A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

Contact Info

Product

Resources

About

A metal/Al₂O₃/ZrO₂/SiO₂/Si (MAZOS) structure for high-performance non-volatile memory application