Fully self-consistent analysis of III-nitride quantum cascade structures

Saha, Sumit Kumar; Kumar, Jitendra

doi:10.1007/s10825-016-0911-5

Cited by 18 publications

(12 citation statements)

References 48 publications

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“…All results are obtained by mean of self-consistently solving Schrödinger and Poisson equations. [33,34] Absorption coefficient of intersubband transition can be obtained as [29,35] quantum well is formed by a nm-thick GaN layer sandwiched between two 8 nm-thick AlN layers. Doping concentration of well and barrier layer is at the level of 10 17 and 10 16 cm −3 and temperature is fixed at room temperature (300 K).…”

Section: Methods and Modelmentioning

confidence: 99%

High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Dan

Nie

et al. 2021

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III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on near‐infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well. The sensitivity to estimate pressure‐dependent intersubband absorption wavelength is almost two orders of magnitude higher than interband photoelectric devices. Additionally, such sensitivity is further enhanced by 2.6 times at 20 GPa as a result of piezo‐phototronic effect. This study paves avenue for designing high‐performance near‐infrared piezo‐phototronic devices based on intersubband transition.

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Section: Methods and Modelmentioning

confidence: 99%

High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Dan

Nie

et al. 2021

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“…is the Hedin-Lundquist exchange-correlation potential [24], where B is the Bohr radius. The solution of the Schrödinger-Poisson system of equations in calculating the potential profiles of nanosystems was determined mainly numerically [7]. Then, using the approach used in the paper [8], the potential ( ) determined by the contribution of the charge carriers within the RTS, can be represented in an analytical form:…”

Section: -2mentioning

confidence: 99%

“…Lately, considerable attention of researchers of multilayer nitride nanostructures has been paid to the study of internal electric fields arising in RTS layers due to significant values of spontaneous and piezoelectric polarizations [5,6], and due to the development of methods for calculating potential profiles of these nanosystems [7,8]. Besides, some theoretical and experimental papers deal with the study of excitons and interband transitions in the mentioned nanosystems [9,10].…”

Section: Introductionmentioning

confidence: 99%

Interaction of electrons with acoustic phonons in AlN/GaN resonant tunnelling nanostructures at different temperatures

Boyko¹,

Petryk²

2020

Condens. Matter Phys.

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The theory of the interaction of electrons with acoustic phonons in multilayer nitride-based AlN/GaN nanostructures was developed for the first time at 0 using the method of finitetemperature Green's functions and Dyson equation. Components of the Hamiltonian describing the system of electrons with acoustic phonons and the magnitudes of the electron spectrum shifts due to the electron-phonon interaction were obtained. Dependences of the electronic spectrum levels and spectrum of the acoustic phonons were found depending on the position of the internal potential barrier in the studied nanostructure. The temperature shifts of the electronic spectrum and decay rates were calculated for various values of temperature .

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“…According to the papers [19,21,25,26], the effective potential of the RTS for an electron will be determined as the sum of the components:…”

Section: )mentioning

confidence: 99%

“…Since it takes into account only the contribution of internal electric fields in the effective potential for an electron, as it will be shown below, it can be used only for the qualitative estimations. In addition, widely used is the method based on the numerical solution of the Schrödinger and Poisson equations [19][20][21], as well as on the software [22] which is often employed by experimenters for calculations [4,6,23,24] based on the k · p method. Generally, the disadvantages of most numerical methods for RTS potential profiles calculation include the linearization of the Schrödinger and Poisson equations at the initial stage of their solution, as well as the neglect of the influence of the boundary conditions for the wave function and the fluxes of its probability.…”

Section: Introductionmentioning

confidence: 99%

Analytical method for calculation of the potential profiles of nitride-based resonance tunneling structures

Boyko¹

2018

Condens. Matter Phys.

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Using the effective mass model for an electron and the dielectric continuum model, analytical solutions of the self-consistent Schrödinger-Poisson system of equations are obtained. Quantum mechanical theory of electronic stationary states, the oscillator strengths of quantum transitions and a method of potential profile calculation is developed for the experimentally constructed three-well resonance-tunneling structure -a separate cascade of quantum cascade detector. For the proposed method, a comparison with the results of other methods and with the results of the experiment was carried out. A good agreement between the calculated value of the detected energy and its experimental value has been obtained, the difference being no more than 2.5%.

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Fully self-consistent analysis of III-nitride quantum cascade structures

Cited by 18 publications

References 48 publications

High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Interaction of electrons with acoustic phonons in AlN/GaN resonant tunnelling nanostructures at different temperatures

Analytical method for calculation of the potential profiles of nitride-based resonance tunneling structures

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