Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers

Abstract

A comprehensive, fully self-consistent, optical-electrical-thermal gain, three-dimensional model of edge-emitting nitride diode lasers has been generalized to simulate a room temperature (RT) continuous-wave (CW) threshold operation of possible designs of a one-dimensional array of these lasers. Nitride A III N materials exhibit higher thermal conductivities than arsenide A III As ones. Nevertheless, an operation of possible nitride arrays has been surprisingly found to be more influenced by thermal interactions between their emitters than in arsenide ones. Therefore, emitters in nitride arrays should be arranged more sparsely to enable their efficient RT CW operation.

Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

“…For the nominal RW laser structure ( Fig. 1) 2 , and DV pn = 3.06 V extracted from the above experimental characteristics. Thermal resistance of a diode laser is considerably dependent on a distance of its main heat sources from its heat sink.…”

“…The ridge-waveguide (RW) structure is usually used in these lasers creating an appropriate current-spreading confinement and, additionally, introducing a better wave-guiding effect than the proton implantation, which is followed by lower lasing thresholds and much lower active-region temperature increase. The main goal of the present work is to investigate an impact of structure details of the RW nitride diode laser on its lasing performance with the aid of the comprehensive self-consistent optical-electrical-thermal-recombination model of nitride edge-emitting diode lasers [2].…”

“…The comprehensive three-dimensional (2D) optical-electrical-thermal-recombination self-consistent model [2] of the GaN-based edge-emitting diode lasers has been developed to investigate their threshold RT operation. The computer model consists of four interrelated parts:…”

GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

“…b) The FE thermal model [17,19] gives details of a heat generation nonradiative recombination, reabsorption of radiation as well as the volume and the barrier Joule heating and its spreading from the heat sources toward the heat sink and within it. c) The optical model describes, for successive radiation modes, optical fields within the resonator.…”

Epitaxial Structure Optimization for High Brightness InGaN Light Emitting Diodes by Using a Self-consistent Finite Element Method

“…In this paper, a self-consistent light-current-voltage solver which takes all the major nonradiative recombination processes and current spillover into account has been utilized to investigate the power efficiency of LEDs with various epilayer structures at high injection levels. In the simulator, the radiative recombination rate is automatically estimated from the multiband Hamiltonian for the wurtzite crystals [5][6][7][8][9]. The non-radiative recombination processes such as Auger and Shockley-Read-Hall recombination processes have also been incorporated in the ambipolar current continuity equations [3,7].…”