A comprehensive, fully self-consistent, optical-electrical-thermal gain, three-dimensional model of edge-emitting nitride diode lasers has been generalized to simulate a room temperature (RT) continuous-wave (CW) threshold operation of possible designs of a one-dimensional array of these lasers. Nitride A III N materials exhibit higher thermal conductivities than arsenide A III As ones. Nevertheless, an operation of possible nitride arrays has been surprisingly found to be more influenced by thermal interactions between their emitters than in arsenide ones. Therefore, emitters in nitride arrays should be arranged more sparsely to enable their efficient RT CW operation.