Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature

Fortunato, Elvira; Barquinha, Pedro; Pimentel, Ana; Gonçalves, A.; Marques, A.; Pereira, L.; Martins, Rodrigo

doi:10.1002/adma.200400368

Cited by 811 publications

(428 citation statements)

References 11 publications

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“…To date, most metal oxide TFTs have been fabricated with amorphous indium zinc oxide (α-IZO), zinc indium tin oxide, 8 ZnO,9 In 2 O 3 , 7 indium gallium zinc oxide, 10−12 or some other oxide semiconductors as channel materials by the sol−gel route, with the performance approaching that of crystalline silicon based materials.…”

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confidence: 99%

Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors

et al. 2012

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Here we report unique performance transistors based on sol−gel processed indium zinc oxide/single-walled carbon nanotube (SWNT) composite thin films. In the composite, SWNTs provide fast tracks for carrier transport to significantly improve the apparent field effect mobility. Specifically, the composite thin film transistors with SWNT weight concentrations in the range of 0−2 wt % have been investigated with the field effect mobility reaching as high as 140 cm 2 /V·s at 1 wt % SWNTs while maintaining a high on/off ratio ∼10 7 . Furthermore, the introduction SWNTs into the composite thin film render excellent mechanical flexibility for flexible electronics. The dynamic loading test presents evidently superior mechanical stability with only 17% variation at a bending radius as small as 700 μm, and the repeated bending test shows only 8% normalized resistance variation after 300 cycles of folding and unfolding, demonstrating enormous improvement over the basic amorphous indium zinc oxide thin film. The results provide an important advance toward high-performance flexible electronics applications. KEYWORDS: Indium zinc oxide, carbon nanotubes, transistor, high mobility, flexible T hin film transistors (TFTs) have broad applications for flexible electronics and information display. In the past, although the silicon-based TFTs have been primarily used for these applications, 1,2 they all have been suffering from a number of limitations, including poor mechanical flexibility and/or indispensable high-temperature deposition processes, and particularly, much poorer performance as compared to the devices fabricated on a single crystalline wafer. Typically, α-Si TFT devices demonstrate a mobility of ∼1 cm 2 /V·s for display application, 3,4 which limits their performance. The emerging organic TFTs can be processed essentially at room temperature but are also limited by poor mobility (∼1 cm 2 /V·s) and poor stability in the long run.5 So there is more and more research exploring new materials for higher performance devices.6,7 With excellent transparency, high stability, and low-temperature processes, amorphous metal oxide materials have drawn considerable attention for potential applications in transparent and flexible electronics, such as touch display panels. To date, most metal oxide TFTs have been fabricated with amorphous indium zinc oxide (α-IZO), zinc indium tin oxide, 8 ZnO,9 In 2 O 3 , 7 indium gallium zinc oxide, 10−12 or some other oxide semiconductors as channel materials by the sol−gel route, with the performance approaching that of crystalline silicon based materials.13 Particularly for α-IZO TFTs prepared via the solution route, they have advantages over the vacuum deposition processes in terms of simplicity, cost, and scalability. High κ self-assembled nanodielectrics has been explored as the gate insulator to fabricate amorphous metal oxide TFTs with the demonstrated mobility as high as 120 cm 2 /V·s. 6 However, thermal stability is a key challenge to self-assembled nanodielectric development.To ...

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Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors

et al. 2012

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“…As shown in Fig. 3(a) and (b), Fortunato et al [20] reported room temperature fabricated ZnO TFTs with invert-staggered structure (high mobility value: approximately 50 cm 2 /V · s) by carefully optimizing oxygen partial pressure during ZnO growth. In fact, the control of oxygen partial pressure suggested a path to the fabrication of highly efficient and reliable TFTs, opening new doors towards the realization of transparent electronic circuits.…”

Section: Operation Of the Tfts And Important Device Parametersmentioning

confidence: 99%

“…After publication of these results, many ZnO TFTs were reported with improved performance and with lowered deposition temperatures suitable for flexible and transparent electronics applications [20][21][22][23]. As shown in Fig.…”

Section: Operation Of the Tfts And Important Device Parametersmentioning

confidence: 99%

Overview of electroceramic materials for oxide semiconductor thin film transistors

2013

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The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxidesemiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant -reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.

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“…On the other hand, metal-oxide semiconductor TFTs that can be processed at low temperatures and yield high mobility values, with a few exceptions, 3 operate mainly as n-channel TFTs. 2,4 Metal-oxide TFTs that are stable under continuous bias stress typically require annealing at temperatures higher than 300 o C, however, strategies are emerging to reduce its processing temperatures, making them more suitable to flexible substrates. 5,6 Therefore, n-channel metal-oxide TFTs combined with p-channel organic TFTs could be used to realize complementary circuit designs that benefit from the intrinsic advantages of these two classes of semiconductors.…”

confidence: 99%

Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

et al. 2012

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We report on the operational stability of low-voltage hybrid organic-inorganic complementary inverters with a top-gate bottom source-drain geometry. The inverters are comprised of p-channel pentacene and n-channel amorphous InGaZnO thin-film transistors (TFTs) with bi-layer gate dielectrics formed from an amorphous layer of a fluoropolymer (CYTOP) and a high-k layer of Al2O3. The p- and n- channel TFTs show saturation mobility values of 0.1 ± 0.01 and 5.0 ± 0.5 cm2/Vs, respectively. The individual transistors show high electrical stability with less than 6% drain-to-source current variations after 1 h direct current (DC) bias stress. Complementary inverters yield hysteresis-free voltage transfer characteristics for forward and reverse input biases with static DC gain values larger than 45 V/V at 8 V before and after being subjected to different conditions of electrical stress. Small and reversible variations of the switching threshold voltage of the inverters during these stress tests are compatible with the observed stability of the individual TFTs

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Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature

Cited by 811 publications

References 11 publications

Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors

Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors

Overview of electroceramic materials for oxide semiconductor thin film transistors

Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

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