Materials Science and Engineering: B
 2004
DOI: 10.1016/j.mseb.2004.07.080
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Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

Puneet Kohli
1
,
S. Chakravarthi
2
,
Amitabh Jain
3
et al.
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Cited by 5 publications
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Influence of the spacer dielectric processes on PMOS junction properties

Morin1,
Wacquant2,
Juhel3
et al. 2005
Materials Science and Engineering: B
7
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Influence of the spacer dielectric processes on PMOS junction properties

Morin1,
Wacquant2,
Juhel3
et al. 2005
Materials Science and Engineering: B
7
0
0
0
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Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties

Pelletier
1
,
Juhel
2
,
Trouiller
3
et al. 2008
Materials Science and Engineering: B
3
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Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors

Essa
1
,
Pelletier
2
,
Morin
3
et al. 2016
Solid-State Electronics
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