Fundamental Properties of Wide Bandgap Semiconductors

Yoshida, Sadafumi; Ito, Toshimichi; Hiraki, Akio; Saitô, Hiroshi; Fujita, Shizυo; Ishitani, Yoshihiro; Sakai, Shiro; Miyajima, Takao; Yamada, Yoichi; Kawakami, Yoichi; Suemune, I.; Hiramatsu, Kazumasa; Kawanishi, Hideo; Amano, Hiroshi; Okumura, Hajime; Mizutani, Takashi

doi:10.1007/978-3-540-47235-3_2

Cited by 2 publications

(4 citation statements)

References 227 publications

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“…Wide band gap semiconductors are commercially used in short-wavelength (blue) light-emitting diodes (LED) and lasers. They are expected to usher applications in high-power, high-speed, and robust optoelectronic devices that can operate in harsh environments . Wide band gap semiconductors are also emerging as attractive materials for integrated photonics, nanophotonics, and nonlinear optoelectronics. − In this context, phosphides and nitrides of gallium (GaP and GaN) are important. , Different nonlinear optical properties of these materials, such as harmonic generation, self-phase modulation, four-wave mixing, and multiphoton absorption, have been extensively investigated. ,,− Among them, multiphoton absorption is relevant for the functionality of photodetectors, lasers, and LEDs.…”

Section: Introductionmentioning

confidence: 99%

“…They are expected to usher applications in highpower, high-speed, and robust optoelectronic devices that can operate in harsh environments. 1 Wide band gap semiconductors are also emerging as attractive materials for integrated photonics, nanophotonics, and nonlinear optoelectronics. 2−5 In this context, phosphides and nitrides of gallium (GaP and GaN) are important.…”

Section: ■ Introductionmentioning

confidence: 99%

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In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

et al. 2023

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Single and multiphoton absorptions in wide band gap semiconductors determine the functionality of photodetectors, lasers, and light-emitting diodes (LEDs). Although electronic structure strongly influences the different orders of multiphoton absorptions in semiconductors, it has not been feasible to quantify their contributions on the functionality of devices. A lack of proper measurement techniques has been the hurdle. Here, we present a simple and sensitive method based on the phase modulation of femtosecond pulses to quantify single-, two-, and three-photon absorptions in GaP and InGaN photodetectors. Our results show that only three-photon absorption contributes to the photocurrent in the InGaN device when excited by femtosecond pulses at 1030 nm. On the other hand, single-, two-, and three-photon absorptions have comparable contributions in the GaP detector. The three contributions have different origins: linear photocurrent is attributed to the absorption by the impurities in the doped regions, two-photon photocurrent is from the phonon-assisted indirect transition from the valence band to the conduction band minimum, and three-photon photocurrent is from the direct transition to the conduction band. We also demonstrate that the method can be applied to image the heterogeneity of multiphoton photocurrent in devices. Our work could be adapted for “in operando” characterization of optoelectronic systems.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

et al. 2023

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Section: Introductionmentioning

confidence: 99%

“…Thin layers and nanostructures of ZnO have already attracted great interest because of their potential application in LEDs and UV laser technology, [33,34] as well as in optoelectronic devices, piezoelectric devices, [35] micro-cavities, [36] nanoparticles, [37] second harmonic generators, [38] UV photodetectors, and acoustic wave devices. [39] Previously, we obtained the ZnO-ZnWO 4 eutectic composite by the micro-pulling-down (µ-PD) method previously. [18,19] The composite grows with a broken-lamellar structure, with the ZnO phase in the form of perforated nano/ microlamellae, ≈240 nm nanometer in thickness, and hundreds of micrometers in width and length, embedded in the ZnWO 4 matrix.…”

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Surprising Eutectics: Enhanced Properties of ZnO‐ZnWO₄ from Visible to MIR

et al. 2022

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Zinc oxide‐zinc tungstate (ZnO‐ZnWO4 ) is a self‐organized eutectic composite consisting of parallel ZnO thin layers (lamellae) embedded in a dielectric ZnWO4 matrix. The electromagnetic behavior of composite materials is affected not only by the properties of single constituent materials but also by their reciprocal geometrical micro‐/nano‐structurization, as in the case of ZnO‐ZnWO4. The light interacting with microscopic structural features in the composite material provides new optical properties, which overcome the possibilities offered by the constituent materials. Here remarkable active and passive polarization control of this composite over various wavelength ranges are shown; these properties are based on the crystal orientation of ZnO with respect to the biaxiality of the ZnWO4 matrix. In the visible range, polarization‐dependent polarized luminescence occurs for blue light emitted by ZnO. Moreover, it is reported on the enhancement of the second harmonic generation of the composite with respect to its constituents, due to the phase matching condition. Finally, in the medium infrared spectral region, the composite behaves as a metamaterial with strong polarization dependence.

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Fundamental Properties of Wide Bandgap Semiconductors

Cited by 2 publications

References 227 publications

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

Surprising Eutectics: Enhanced Properties of ZnO‐ZnWO₄ from Visible to MIR

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Fundamental Properties of Wide Bandgap Semiconductors

Cited by 2 publications

References 227 publications

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

Surprising Eutectics: Enhanced Properties of ZnO‐ZnWO4 from Visible to MIR

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Surprising Eutectics: Enhanced Properties of ZnO‐ZnWO₄ from Visible to MIR