Fundamentals and Applications of Reflection FTIR Spectroscopy for the Analysis of Plasma Processes at Materials Interfaces

Abstract

Plasma processes are widely used for the deposition of thin films and/or the functionalization of material surfaces and interfaces ranging from inorganic to organic structures. The characterization of such plasma-modified surfaces is challenging and most efficiently performed by optical methods, such as FTIR-spectroscopy and related techniques. The present review aims at bridging the gap between optical spectroscopy fundamentals and the application of such experimental techniques in plasma surface science and engineering. The first part of the review covers the most relevant theoretical aspects of different reflection FTIR-spectroscopy approaches; the second part presents the different applications of these principles for the investigation of surface processes induced by plasma. The applications take into account interaction of plasma with metal surfaces, semiconductors, and polymeric materials.

Critical remarks on chemical derivatization analysis of plasma‐treated polymer surfaces and plasma polymers

“…FT‐IR spectrometers are available in many laboratories and the theoretical concept of the “effective thickness” for an ATR configuration, defined by the angle of incidence, polarization, and the relevant refractive thicknesses, makes a quantitative analysis straightforward . (Interested readers may also consult a recent review article on the utilization of ATR FT‐IR and FT‐IR techniques in general for the analysis of plasma processes at materials interfaces …”

“…[11] (Interested readers may also consult a recent review article on the utilization of ATR FT-IR and FT-IR techniques in general for the analysis of plasma processes at materials interfaces. [66] ).…”

Decoupling of ion‐ and photon‐activation mechanisms in polymer surfaces exposed to low‐temperature plasmas

“…A total of 30 nm‐thick PP layers were deposited by spin coating onto optical cavity substrates (OCS) consisting of undoped silicon wafers with both sides thermally oxidized and with an Al coating as back‐reflector. This configuration is optimized to enhance the IR signal sensitivity for CH x stretching groups (between 2800 and 3000 cm −1 ) . The deposition procedure of PP by spin coating was performed following a modified version of the procedure reported by Song et al where 1.6 g of syndiotactic polypropylene is dissolved in 400 ml xylene constantly stirring at 95 °C for several hours.…”

Combined in situ infrared reflection absorption spectroscopy–quartz crystal microbalance investigation of the initial growth stages of plasma‐deposited SiOx on polypropylene

“…Discrete polarization modulation was performed in order to increase the absorption sensitivity of surface species and to remove the absorption of gas species. The absorbance spectra were calculated according to the following equation where I p is the absorption for parallel‐polarized light and I s is the absorption for perpendicular‐polarized light in the case of the sample under study, and I 0 p and I 0 s correspond to the absorption of the gold reference substrate. The difference A = A p − A s is due only to the absorption of the surface layer.…”