2022
DOI: 10.3390/mi14010047
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Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

Abstract: The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human–machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential gene… Show more

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Cited by 8 publications
(2 citation statements)
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“…Piezoelectric materials play an important role in the field of flexible electronics [ 1 , 2 , 3 , 4 ], precision engineering [ 5 , 6 , 7 ], and microelectronics packaging [ 8 , 9 , 10 , 11 ]. Piezoelectric materials can deform under the action of electrical flow, which is called piezoelectric effect [ 12 ]. The piezoelectric stacks made by connecting several piezoelectric ceramic pieces in series can efficiently converts electrical energy into mechanical energy.…”
Section: Introductionmentioning
confidence: 99%
“…Piezoelectric materials play an important role in the field of flexible electronics [ 1 , 2 , 3 , 4 ], precision engineering [ 5 , 6 , 7 ], and microelectronics packaging [ 8 , 9 , 10 , 11 ]. Piezoelectric materials can deform under the action of electrical flow, which is called piezoelectric effect [ 12 ]. The piezoelectric stacks made by connecting several piezoelectric ceramic pieces in series can efficiently converts electrical energy into mechanical energy.…”
Section: Introductionmentioning
confidence: 99%
“…Using multi-effect coupling for semiconductor materials to design new electronic devices is an effective means of optimizing device performance and improving the integration of on-chip devices. By utilizing the piezotronic and piezo-phototronic effects, various high-performance electronic and optoelectronic devices can be realized [ 16 , 17 , 18 , 19 , 20 , 21 ]. For example, Yiyao Peng et al prepared a self-powered flexible UV photodetector based on p-GaN/n-ZnO heterostructure, the relative optical response of which can be increased to 22% after applying −0.48% compressive strain under UV irradiation of 38.4 mW/cm 2 [ 21 ].…”
Section: Introductionmentioning
confidence: 99%