Fundamentals of low-noise analog circuit design

Leach, Jr. W.M.

doi:10.1109/5.326411

Cited by 116 publications

(42 citation statements)

References 21 publications

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“…Thus, the sample and the detector noise voltages are scaled by a factor of 1/b or between 1.5 and 2 times over the pre-amp noise voltage, and the whole is scaled by about 20 to match the measurements. More sophisticated models exist: for example, Leach 43 describes the pre-amp noise as the combination of a voltage noise and a current noise (which are generally correlated). This model gives an accurate description of the background noise, based on direct measurements of the preamp noise with different input loads (short, open, or 50 X).…”

Section: Discussionmentioning

confidence: 99%

Measuring trapped noise in metamaterials

Wiltshire

Syms

2014

Journal of Applied Physics

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Triple band polarization-independent ultra-thin metamaterial absorber using electric field-driven LC resonator J. Appl. Phys. 115, 064508 (2014) Metamaterials constructed from conductive elements are lossy, and the structures act as sources of noise, whose spectrum is modified by the resonant nature of the medium itself. Furthermore, inside the medium, the noise is present as waves, which are standing waves for finite length samples. We present direct measurements of the noise spectra for a simple metamaterial comprising arrays of LC resonator elements, and compare them with the predictions of a circuit model incorporating Johnson noise. We find excellent agreement between the measured data and the model, reproducing both the resonant structure and the bandwidth of the noise spectrum, thus confirming the concept of noise waves in these metamaterials. These noise features match the frequency ranges where the metamaterial properties are useful, showing that noise is an inevitable companion to metamaterial performance in practical situations. V C 2014 AIP Publishing LLC.

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Section: Discussionmentioning

confidence: 99%

Measuring trapped noise in metamaterials

Wiltshire

Syms

2014

Journal of Applied Physics

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“…An important factor determining their improvement is on RF front end circuits [4,6,8,9]. RF front-end components with high linearity and flat gain performance as well as high efficiency and low thermal dissipation loss are highly necessary [2,3,5,7].…”

Section: -Introductionmentioning

confidence: 99%

Design of the Low Noise Amplifier Circuit in Band L for Improve the Gain and Circuit Stability

Omidi

Karami

Emadi

et al. 2018

ESJ

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In this paper, focuses on the design of Low Noise Amplifier circuitry in the frequency band L. This circuit is designed using the 0.18 nm CMOS transistor technology, which consists of two transistor Stage. The purpose of this research is to improve the cost of: Increase Gain -Increase circuit linearization -Create an integrative matching network for system stability. The application of this circuit can be used in wireless and GPS systems. The CMOS LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1 -dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm. This circuit is designed using ADS software. Keywords:Gain; Noise Figure 1-IntroductionBuilt-in Global Positioning System (GPS) capability is increasingly becoming a standard feature for cellular handset and other low-cost embedded applications. The requirements for these systems provide a strong motivation for developing highly integrated and low-cost GPS receivers. Low-noise amplifiers (LNAs) in GPS receivers are often the most challenging block to implement, given the difficulty of simultaneously achieving sufficient gain, low noise figure, and low power consumption. Typically, GPS receivers operate in the L-band frequency range (1575.42 MHz (L1), 1227.60 MHz (L2), 1381.05 MHz (L3) and 1176.45 MHz (L5)). Designing a monolithic LNA at L-band poses significant challenges due to the large size of the passive components, making it difficult to implement the LNA with its requisite matching networks on-die. Complementary Metal-Oxide-Semiconductor (CMOS) [1] are attractive for analog, mixed-signal and RF applications because they exhibit very low noise figure and very high power gain, at modest power dissipation levels, which can be leveraged to improve the sensitivity of receiver front-ends. CMOS technology utilizes band gap engineering to improve transistor performance, and at present peak cutoff frequency (fT) and peak maximum oscillation frequency (fmax) greater than 300 GHz have been achieved at modest lithographic feature size (0.18 nm), while maintaining compatibility with the traditional CMOS processes In this paper, we present a high gain, L-band CMOS LNA with fully-integrated on-chip matching networks. At 1.575 GHz, the LNA achieves a gain of 26 dB, a NF of 3.2 dB, while dissipating 17.89 mW of dc power.Communication systems have been improving a lot in the last decades [1]. An important factor determining their improvement is on RF front end circuits [4,6,8,9]. RF front-end components with high linearity and flat gain performance as well as high efficiency and low thermal dissipation loss are highly necessary [2,3,5,7]. In case of satellite telecommunication, signal transmission travelling thousands of miles from the ground station-to-satellite and satellite-to-receiving fixed and mobile stations demands RF front-end transistors meeting stringent requirements. Specifications, including the low noise amplifier of rec...

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“…The results clearly indicate that there is a 22 dB common mode rejection between the beam and the units as measured with a Welch averaged spectra. Our approach was to estimate the array rms noise based on a root-square sum of all noise contributions, as given in [14,15]. We estimated the array rms noise as:…”

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confidence: 99%